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PEE51_GaN_motor_driver/pcb/lib/EPCGaNLibrary.lib
LailaTheElf 0802754636
setup for simulation
2025-04-23 12:17:36 +02:00

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*****************************************************************************
* EPC GaN Power Device Library
* (C) Copyright Efficient Power Conversion Corporation. All rights reserved.
* ***********************************************************************
* Version History:
* 1.02: Changed the EPC2014 Model to fix the IDSS leakage issue
* 1.03: Included EPC2016 Model; Removed the EPC1000 series Models
* 1.04: Included the EPC2018 Model
* 1.05: 09/23/2013 Included the EPC80XX Models
* 1.06: 01/03/2014 Included EPC8010 Model
* 1.07: 06/30/2014 Included EPC2019 to EPC2024 Models
* 1.08: 09/18/2014 Included EPC2100Q1 and EPC2100Q2 Models,
* Fixed the Rg numbers on the EPC2020-EPC2024
* 1.09: 09/29/2014 Included EPC2025 Model
* 1.10: 11/12/2014 Included EPC2101Q1, EPC2101Q2 Models
* Included EPC2105Q1, EPC2105Q2 Models
* 1.11: 01/12/2015 Included EPC2027, EPC2001C, EPC2014C, EPC2010C, EPC2012C Models
* Updated EPC8010, EPC2019 models
* 1.12: 01/21/2015 Included EPC2102Q1, EPC2102Q2 Models
* Included EPC2103Q1, EPC2103Q2, EPC2007C Models
* 1.13: 03/30/2015 Included EPC2016C, EPC2029 Models
* 1.14: 04/06/2015 Included EPC2104Q1, EPC2104Q2 Models
* 1.15: 04/20/2015 Included EPC2035, EPC2036, EPC2015C Models
* 1.16: 05/21/2015 Included EPC2030, EPC2031, EPC2032 Models
* 1.17: 05/30/2015 Included EPC2033, EPC2034 Models
* Updated the EPC2032 Model
* 1.18: 07/10/2015 Included EPC2107Q1, EPC2107Q2, EPC2107Q3 Models
* Included EPC2108Q1, EPC2108Q2, EPC2108Q3 Models
* Included the EPC2038 Model
* 1.19: 07/24/2015 Included EPC2106Q1, EPC2106Q2, EPC2037 Models
* Included EPC2110Q1, EPC2110Q2, EPC2039 Models
* 1.20: 09/29/2015 Updated EPC2025, EPC8002, EPC2015C Models
* 1.21: 01/06/2016 Included EPC2040 Model
* 1.22: 04/07/2016 Updated the EPC2032 Model from the Preliminary Version
* 1.23: 04/08/2016 Updated the EPC2015C Model from the Preliminary Version
* 1.24: 04/11/2016 Updated the EPC2021 Model from the Preliminary Version
* 1.25: 04/13/2016 Updated the EPC2029 Model from the Preliminary Version
* 1.26: 04/15/2016 Updated the EPC2020 Model from the Preliminary Version
* 1.27: 05/18/2016 Updated the EPC2034 Model from the Preliminary Version
* 1.28: 06/30/2016 Updated the EPC2024 Model from the Preliminary Version
* 1.29: 07/13/2016 Updated the EPC2022 Model from the Preliminary Version
* 1.30: 11/02/2016 Updated the EPC2034 Model
* 1.31: 01/31/2017 Updated the EPC2033 Model from the Preliminary Version
* 1.32: 02/15/2017 Updated the EPC2038 Model from the Preliminary Version
* 1.33: 03/07/2017 Included EPC2045 Model
* 1.34: 03/08/2017 Included EPC2047 Model
* 1.35: 04/03/2017 Updated EPC2039 Model from the Preliminary Version
* 1.36: 04/19/2017 Updated EPC2037 Model from the Preliminary Version
* 1.37: 04/21/2017 Updated EPC2040 Model from the Preliminary Version
* 1.38: 05/16/2017 Included EPC2046 Model
* 1.39: 06/01/2017 Included EPC2111Q1 and EPC2111Q2 Models
* 1.40: 07/25/2017 Updated EPC2107Q1, EPC2107Q2, and EPC2107Q3 Models from the Preliminary Version
* Updated EPC2108Q1, EPC2108Q2, and EPC2108Q3 Models from the Preliminary Version
* 1.41: 09/14/2017 Updated EPC2023 Model from the Preliminary Version
* 1.42: 12/14/2017 Included EPC2049 Model
* 1.43: 12/21/2017 Updated EPC2100Q1, EPC2100Q2 Models from the Preliminary Version
* 1.44: 04/10/2018 Included EPC2050 Model
* 1.45: 06/06/2018 Included EPC2202 Model
* 1.46: 07/23/2018 Included EPC2051 Model
* 1.47: 09/25/2018 Included EPC2203 Model
* 1.48: 10/02/2018 Updated EPC2045 Model from the Preliminary Version
* 1.49: 10/02/2018 Updated EPC2051 Model from the Preliminary Version
* 1.50: 10/10/2018 Included EPC2206 Model
* 1.51: 10/19/2018 Included EPC2212 Model
* 1.52: 12/31/2018 Included EPC2053 Model
* 1.53: 12/31/2018 Included EPC2052 Model
* 1.54: 01/14/2019 Included EPC2055 Model
* 1.55: 03/11/2019 Updated EPC2052 Model from the Preliminary Version
* 1.56: 03/22/2019 Updated EPC2053 Model from the Preliminary Version
* 1.57: 04/04/2019 Included EPC2214 Model
* 1.58: 05/30/2019 Included EPC2708 Model
* 1.59: 06/05/2019 Included EPC2059 Model
* 1.60: 06/05/2019 Included EPC2056 Model
* 1.61: 06/09/2019 Updated EPC2052 Model from the Preliminary Version
* 1.62: 06/12/2019 Updated EPC2708 Model from the Preliminary Version
* 1.63: 08/08/2019 Included EPC2034C Model
* 1.64: 10/01/2019 Included EPC2216 Model
* 1.65: 08/13/2020 Included EPC2215 Model
* 1.66: 08/13/2020 Included EPC2207 Model
* 1.67: 08/13/2020 Included EPC2218 Model
* 1.68: 08/13/2020 Included EPC2204 Model
* 1.69: 10/14/2020 Updated EPC2059 Model from the Preliminary Version
* 1.70: 12/14/2020 Updated EPC2055 Model from the Preliminary Version
* 1.71: 01/15/2021 Included EPC2219 Model
* 1.72: 04/07/2021 Included EPC2301 Model
* 1.73: 06/07/2021 Included EPC2065 Model
* 1.74: 06/07/2021 Included EPC2054 Model
* 1.75: 06/11/2021 Updated EPC2301 Model from the Preliminary Version
* 1.76: 09/21/2021 Included EPC2069 Model
* 1.77: 10/18/2021 Included EPC2067 Model
* 1.78: 11/19/2021 Included EPC2070 Model
* 1.79: 01/11/2022 Updated EPC2037 Model
* 1.80: 01/31/2022 Included EPC7014 and EPC2302 Models; Removed EPC2301 Model
* 1.81: 03/31/2022 Updated EPC2050 Model from the Preliminary Version
* 1.82: 04/05/2022 Included EPC2221Q1, EPC2221Q2 Model
* 1.83: 04/13/2022 Included EPC2071 Model
* 1.84: 04/28/2022 Included EPC2066 Model; Removed Duplicate EPC8002 Model
* Removed Duplicate EPC2107Q1, EPC2107Q2, and EPC2107Q3 Models
* Removed Duplicate EPC2108Q1, EPC2108Q2, and EPC2108Q3 Models
* 1.85: 06/13/2022 Added Missing Parameter to EPC2032, EPC2015C, EPC2021, EPC2029, EPC2020,
* EPC2034, EPC2024, EPC2033, EPC2038, EPC2022 Models
* 1.86: 07/05/2022 Included EPC2218A and EPC2088 Models; Updated EPC2218 Model Rg
* 1.87: 07/11/2022 Included EPC2305 and EPC2063 Models
* 1.88: 07/21/2022 Included EPC2044 Model
* 1.89: 10/10/2022 Included EPC7003 Model
* 1.90: 10/18/2022 Included EPC2308 Model
* 1.91: 11/03/2022 Included EPC2306 Model
* 1.92: 12/02/2022 Included EPC2204A Model
* 1.93: 12/14/2022 Included EPC2304 and EPC2307 Models
* 1.94: 01/17/2023 Included EPC2252 Model
* 1.95: 05/24/2023 Updated EPC2306 from preliminary version
* 1.96: 06/05/2023 Included EPC2619 Model
* 1.97: 10/27/2023 Included EPC7002 Model
* 1.98: 12/06/2023 Edited EPC7002 Model
* 1.99: 03/07/2024 Included EPC2361 Model
* 1.100: 06/07/2024 Included EPC2057 Model
* 1.101: 05/24/2023 Updated EPC2308 from preliminary version
************************************************************************
.subckt EPC2001 gatein drainin sourcein
.param aWg=1077 A1=41.7998 k2=2.259866e+000 k3=1.2e-001 rpara=4.463059e-003
+ aITc=5.486028e-003 arTc=-4.699671e-003 ax0Tc=0.75E-4 x0_0=-0.75 x0_1=1.10
+ dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23
+ ags1=8.6952e-010 ags2=5.3168e-010 ags3=1.9975e+000 ags4=2.8377e-001
+ ags5=-1.4751e-010 ags6=-7.5163e+000 ags7=7.2121e+000
+ agd1=1.4182e-011 agd2=2.1475e-010 agd3=-3.8030e+000 agd4=5.9551e+000
+ asd1=3.3621e-010 asd2=6.3080e-010 asd3=-1.2803e+001 asd4=2.2690e+000
+ asd5=2.5818e-010 asd6=-4.0599e+001 asd7=2.0638e+001
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max((x0_0+x0_1*v(gate,source))/(1+ax0Tc*(Temp-25)*(Temp-25)),0.5)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max((x0_0+x0_1*v(gate,drain))/(1+ax0Tc*(Temp-25)*(Temp-25)),0.5)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2101Q1 gatein drainin sourcein
.param aWg=545 A1=20.964 k2=2.5711 k3=0.15 rpara=0.0050511
+ aITc=0.004095 arTc=-0.0065 k2Tc=0.00063 x0_0=1.6741 x0_1=4.0292e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.7567e-10 ags2=1.4868e-10 ags3=2.0602 ags4=0.1983
+ ags5=-1.7078e-13 ags6=-5.8427 ags7=3.8068
+ agd1=8.8e-13 agd2=2.9158e-11 agd3=-0.5565 agd4=2.0012
+ agd5=5.4008e-11 agd6=-3.5249 agd7=6.5591
+ agd8=2.8895e-12 agd9=-61.104 agd10=7.4545
+ asd1=6.5221e-11 asd2=2.1126e-10 asd3=-14.138 asd4=6.6028
+ asd5=2.5911e-10 asd6=-0.67348 asd7=69.765
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2101Q2 gatein drainin sourcein
.param aWg=2332 A1=84.66 k2=2.5638 k3=0.15 rpara=0.001248
+ aITc=0.0043875 arTc=-0.0065 k2Tc=0.00068 x0_0=1.4548 x0_1=3.5439e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.1375e-09 ags2=6.2592e-10 ags3=2.1515 ags4=0.18392
+ ags5=-1.1623e-13 ags6=-4.9545 ags7=4.0241
+ agd1=9.7167e-13 agd2=9.7641e-11 agd3=-0.99305 agd4=1.144
+ agd5=2.3196e-10 agd6=-5.8159 agd7=7.161
+ agd8=1.6076e-11 agd9=-69.424 agd10=9.7951
+ asd1=1.0475e-10 asd2=1.1071e-09 asd3=-12.732 asd4=8.3633
+ asd5=1.9265e-09 asd6=-0.43101 asd7=68.512
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2105Q1 gatein drainin sourcein
.param aWg=495 A1=24.162 k2=2.5174 k3=0.15 rpara=0.0071194
+ aITc=0.004095 arTc=-0.0065 k2Tc=0.00063 x0_0=2.0936 x0_1=5.0622e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.6142e-10 ags2=1.3291e-10 ags3=2.1154 ags4=0.22222
+ ags5=-2.1478e-13 ags6=-6.4826 ags7=3.788
+ agd1=1.2296e-12 agd2=2.6957e-11 agd3=-0.59196 agd4=1.8256
+ agd5=4.7297e-11 agd6=-3.0329 agd7=6.6465
+ agd8=1.7022e-12 agd9=-58.642 agd10=13.537
+ asd1=6.8149e-11 asd2=2.1718e-10 asd3=-16.163 asd4=6.1603
+ asd5=2.4788e-10 asd6=-0.56336 asd7=71.91
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2105Q2 gatein drainin sourcein
.param aWg=2118 A1=69.922 k2=2.4452 k3=0.15 rpara=0.001449
+ aITc=0.0043875 arTc=-0.0065 k2Tc=0.00068 x0_0=1.1852 x0_1=4.7752e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.049e-09 ags2=5.1279e-10 ags3=2.0767 ags4=0.20712
+ ags5=-1.1165e-13 ags6=-5.1057 ags7=4.4313
+ agd1=8.4364e-13 agd2=1.1793e-10 agd3=-0.99289 agd4=1.1764
+ agd5=1.7117e-10 agd6=-5.4567 agd7=6.9591
+ agd8=1.0225e-11 agd9=-82.981 agd10=11.273
+ asd1=1.0557e-10 asd2=1.3587e-09 asd3=-12.187 asd4=8.0986
+ asd5=1.691e-09 asd6=-0.38541 asd7=96.974
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2015 gatein drainin sourcein
.param aWg=1566 A1=56.4191 k2=2.210862e+000 k3=0.12 rpara=2.455223e-003
+ aITc=5.897702e-003 arTc=-3.943989e-003 ax0Tc=9.0E-5 x0_0=-0.8061 x0_1=1.1722
+ dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23
+ ags1=1.0939e-009 ags2=5.8668e-010 ags3=2.0725e+000 ags4=2.9310e-001
+ ags5=-1.4047e-010 ags6=-7.5506e+000 ags7=6.5435e+000
+ agd1=3.7528e-011 agd2=3.3146e-010 agd3=-2.4961e+000 agd4=6.4081e+000
+ asd1=3.4550e-010 asd2=4.6953e-010 asd3=-1.3256e+001 asd4=2.6675e+000
+ asd5=2.9760e-010 asd6=-3.8909e+001 asd7=2.0830e+001
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max((x0_0+x0_1*v(gate,source))/(1+ax0Tc*(Temp-25)*(Temp-25)),0.5)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max((x0_0+x0_1*v(gate,drain))/(1+ax0Tc*(Temp-25)*(Temp-25)),0.5)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2010 gatein drainin sourcein
.param aWg=599 A1=15.5 k2=2.2 k3=0.16 rpara=0.014
+ aITc=.0019 arTc=-0.0072 ax0Tc=0.0 x0_0=0.31 x0_1=0.255
+ dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23
+ ags1=4.6652e-010 ags2=2.8515e-010 ags3=1.6844e+000 ags4=2.4330e-001
+ ags5=-7.8476e-011 ags6=-3.3067e+000 ags7=6.0549e+000
+ agd1=1.0549e-011 agd2=1.0922e-010 agd3=-3.0877e+000 agd4=5.2526e+000
+ asd1=2.2894e-010 asd2=4.7887e-010 asd3=-1.3263e+001 asd4=1.8444e+000
+ asd5=2.1370e-010 asd6=-4.4350e+001 asd7=3.0604e+001
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2018 gatein drainin sourcein
.param aWg=599 A1=15.5 k2=2.2 k3=0.16 rpara=0.014
+ aITc=.0019 arTc=-0.0072 ax0Tc=0.0 x0_0=0.31 x0_1=0.255
+ dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23
+ ags1=4.6652e-010 ags2=2.8515e-010 ags3=1.6844e+000 ags4=2.4330e-001
+ ags5=-7.8476e-011 ags6=-3.3067e+000 ags7=6.0549e+000
+ agd1=1.0549e-011 agd2=1.0922e-010 agd3=-3.0877e+000 agd4=5.2526e+000
+ asd1=2.2894e-010 asd2=4.7887e-010 asd3=-1.3263e+001 asd4=1.8444e+000
+ asd5=2.1370e-010 asd6=-4.4350e+001 asd7=3.0604e+001
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2012 gatein drainin sourcein
.param aWg=146 A1=4.3309 k2=2.1 k3=0.12 rpara=0.06
+ aITc=0.0043 arTc=-0.0068 ax0Tc=0.0028 x0_0=0.0 x0_1=0.45
+ dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23
+ ags1=1.2450e-010 ags2=7.9121e-011 ags3=1.6339e+000 ags4=2.0698e-001
+ ags5=-1.5134e-011 ags6=-9.3226e+000 ags7=3.9756e+000
+ agd1=3.0183e-012 agd2=2.1636e-011 agd3=-6.9085e+000 agd4=4.3081e+000
+ agd5=1.1765e-012 agd6=-8.2032e+001 agd7=1.2520e+001
+ asd1=6.0088e-011 asd2=1.2843e-010 asd3=-1.6361e+001 asd4=1.9825e+000
+ asd5=4.3202e-011 asd6=-6.0821e+001 asd7=3.2895e+001
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max((1-ax0Tc*(Temp-25))*(x0_0+x0_1*v(gate,source)),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max((1-ax0Tc*(Temp-25))*(x0_0+x0_1*v(gate,drain)),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2014 gatein drainin sourcein
.param aWg=385 A1=16 k2=1.82 k3=1.2E-1 rpara=0.0095
+ aITc=0.0064 arTc=-0.0042 x0_0=0.1 x0_1=1.0 x0_1_TC=0.0071
+ dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23
+ ags1=2.8997e-010 ags2=1.4466e-010 ags3=1.5106e+000 ags4=3.2671e-001
+ ags5=-4.4512e-011 ags6=-7.1238e+000 ags7=2.4132e+000
+ agd1=9.4651e-012 agd2=2.9723e-011 agd3=-5.3469e+000 agd4=2.5402e+000
+ agd5=1.7786e-011 agd6=-5.8906e+000 agd7=4.2934e+000
+ asd1=7.6511e-011 asd2=1.3078e-010 asd3=-1.1932e+001 asd4=2.6560e+000
+ asd5=9.1519e-011 asd6=-3.8657e+001 asd7=3.4486e+001
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2007 gatein drainin sourcein
.param aWg=264 A1=10.38 k2=2.0 k3=0.12 rpara=0.0188
+ aITc=0.0037 arTc=-0.0054 x0_0=1.4 x0_1=0.40 x0_1_TC=0.004
+ dgs1=4.3e-7 dgs2=2.6e-13 dgs3=.8 dgs4=.23
+ ags1=1.9587e-010 ags2=1.1717e-010 ags3=1.7371e+000 ags4=3.0184e-001
+ ags5=-2.0183e-011 ags6=-1.4735e+001 ags7=4.9779e+000
+ agd1=6.1726e-012 agd2=1.9609e-011 agd3=-4.4492e+000 agd4=2.1445e+000
+ agd5=1.4393e-011 agd6=-1.4160e+001 agd7=4.4510e+000
+ asd1=8.4673e-011 asd2=1.4742e-010 asd3=-1.9467e+001 asd4=3.9271e+000
+ asd5=9.0329e-011 asd6=-2.9550e+001 asd7=2.5332e+001
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC2016 gatein drainin sourcein
.param aWg=516.7876 A1=19.3192 k2=1.8 k3=0.12 rpara=0.00914
+ aITc=0.0037 arTc=-0.0054 x0_0=1.4 x0_1=0.4 x0_1_TC=0.004
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=4.2869e-10 ags2=2.3995e-10 ags3=1.5268 ags4=0.28285
+ ags5=-4.0388e-11 ags6=-10.556 ags7=4.7655
+ agd1=4.3552e-12 agd2=3.057e-11 agd3=-4.3911 agd4=2.1297
+ agd5=2.7951e-11 agd6=-11.793 agd7=4.4817
+ asd1=1.5627e-10 asd2=3.0566e-10 asd3=-18.122 asd4=4.5183
+ asd5=1.7612e-10 asd6=-34.683 asd7=27.513
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.6)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8002 gatein drainin sourcein
.param aWg=14 A1=0.59557 k2=2.4645 k3=0.15 rpara=0.27298 rpara_s_factor=0.29
+ aITc=0.00325 arTc=-0.0065 k2Tc=0.00088 x0_0=1.1371 x0_1=8.2967e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.9424e-11 ags2=3.7971e-12 ags3=2.0159 ags4=0.20705
+ ags5=-1.2089e-13 ags6=-4.288 ags7=2.6466
+ agd1=2.7976e-15 agd2=1.7743e-12 agd3=-0.065681 agd4=3.2062
+ agd5=5.6261e-13 agd6=-13.247 agd7=5.2535
+ agd8=1.3059e-13 agd9=-56.273 agd10=20.505
+ asd1=5.1501e-12 asd2=4.0613e-12 asd3=-19.4 asd4=3.4482
+ asd5=6.5483e-12 asd6=-0.21194 asd7=23.462 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8003 gatein drainin sourcein
.param aWg=35.3 A1=3 k2=2.25 k3=0.175 rpara=0.2316
+ aITc=0.0036 arTc=-0.0036 x0_0=1.64 x0_1=-0.0418 x0_1_TC=0.0639
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=3.7768e-11 ags2=1.6007e-11 ags3=1.6159 ags4=0.24151
+ ags5=-1.1213e-13 ags6=-2.7956 ags7=3.3008
+ agd1=1.5626e-13 agd2=8.0172e-12 agd3=-0.75355 agd4=1.9865
+ agd5=9.2015e-13 agd6=-12.485 agd7=4.7267
+ asd1=1.4323e-11 asd2=9.86e-12 asd3=-2.3063 asd4=1.7098
+ asd5=1.2619e-11 asd6=-28.306 asd7=27.559
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.4)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8004 gatein drainin sourcein
.param scale=50.4/25
.param aWg=scale*25 A1=scale*1.593 k2=2.03 k3=0.177 rpara=0.1412/scale
+ aITc=0.0036 arTc=-0.0036 x0_0=1.02 x0_1=0.1789 x0_1_TC=0.004
+ dgs1=scale*4.3e-7 dgs2=scale*2.6e-13 dgs3=.8 dgs4=.23
+ ags1=(scale*15.6E-12 + 13.1E-12) ags2=scale*8.875E-12 ags3=1.56 ags4=0.26
+ ags5=scale*-2.01E-13 ags6=-7.99 ags7=2.46
+ agd1=scale*0.167E-12 agd2=scale*3.523E-12 agd3=-0.889 agd4=1.044
+ agd5=scale*1.14E-12 agd6=-5.658 agd7=4.445
+ asd1=(scale*2.72E-12 + 1.9E-12) asd2=scale*9.00E-12 asd3=-6.1585 asd4=3.1215
+ asd5=scale*6.37E-12 asd6=-42.978 asd7=28.23
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.4)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8005 gatein drainin sourcein
.param scale=25/25
.param aWg=scale*25 A1=scale*1.593 k2=2.03 k3=0.177 rpara=0.16/scale
+ aITc=0.0036 arTc=-0.0036 x0_0=1.02 x0_1=0.1789 x0_1_TC=0.004
+ dgs1=scale*4.3e-7 dgs2=scale*2.6e-13 dgs3=.8 dgs4=.23
+ ags1=(scale*17.8E-12 + 11.4E-12) ags2=scale*8.714E-12 ags3=1.51 ags4=0.22
+ ags5=scale*-1.62E-13 ags6=-4.86 ags7=3.092
+ agd1=scale*0.194E-12 agd2=scale*4.409E-12 agd3=-0.714 agd4=1.366
+ agd5=scale*0.863E-12 agd6=-5.999 agd7=3.914
+ asd1=(scale*4.404E-12 + 1.81E-12) asd2=scale*10.33E-12 asd3=-4.105 asd4=3.001
+ asd5=scale*6.68E-12 asd6=-31.31 asd7=20.89
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.4)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8006 gatein drainin sourcein
.param scale=1
.param aWg=scale*25 A1=scale*1.593 k2=2.03 k3=0.177 rpara=0.1412/scale
+ aITc=0.0036 arTc=-0.0036 x0_0=1.02 x0_1=0.1789 x0_1_TC=0.004
+ dgs1=scale*4.3e-7 dgs2=scale*2.6e-13 dgs3=.8 dgs4=.23
+ ags1=(scale*15.6E-12 + 13.1E-12) ags2=scale*8.875E-12 ags3=1.56 ags4=0.26
+ ags5=scale*-2.01E-13 ags6=-7.99 ags7=2.46
+ agd1=scale*0.167E-12 agd2=scale*3.523E-12 agd3=-0.889 agd4=1.044
+ agd5=scale*1.14E-12 agd6=-5.658 agd7=4.445
+ asd1=(scale*2.72E-12 + 1.9E-12) asd2=scale*9.00E-12 asd3=-6.1585 asd4=3.1215
+ asd5=scale*6.37E-12 asd6=-42.978 asd7=28.23
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.4)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8007 gatein drainin sourcein
.param scale=40.8/25
.param aWg=scale*25 A1=scale*1.593 k2=2.03 k3=0.177 rpara=0.1412/scale
+ aITc=0.0036 arTc=-0.0036 x0_0=1.02 x0_1=0.1789 x0_1_TC=0.004
+ dgs1=scale*4.3e-7 dgs2=scale*2.6e-13 dgs3=.8 dgs4=.23
+ ags1=(scale*15.6E-12 + 13.1E-12) ags2=scale*8.875E-12 ags3=1.56 ags4=0.26
+ ags5=scale*-2.01E-13 ags6=-7.99 ags7=2.46
+ agd1=scale*0.167E-12 agd2=scale*3.523E-12 agd3=-0.889 agd4=1.044
+ agd5=scale*1.14E-12 agd6=-5.658 agd7=4.445
+ asd1=(scale*2.72E-12 + 1.9E-12) asd2=scale*9.00E-12 asd3=-6.1585 asd4=3.1215
+ asd5=scale*6.37E-12 asd6=-42.978 asd7=28.23
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.4)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8008 gatein drainin sourcein
.param scale=19.2/25
.param aWg=scale*25 A1=scale*1.593 k2=2.03 k3=0.177 rpara=0.1412/scale
+ aITc=0.0036 arTc=-0.0036 x0_0=1.02 x0_1=0.1789 x0_1_TC=0.004
+ dgs1=scale*4.3e-7 dgs2=scale*2.6e-13 dgs3=.8 dgs4=.23
+ ags1=(scale*15.6E-12 + 13.1E-12) ags2=scale*8.875E-12 ags3=1.56 ags4=0.26
+ ags5=scale*-2.01E-13 ags6=-7.99 ags7=2.46
+ agd1=scale*0.167E-12 agd2=scale*3.523E-12 agd3=-0.889 agd4=1.044
+ agd5=scale*1.14E-12 agd6=-5.658 agd7=4.445
+ asd1=(scale*2.72E-12 + 1.9E-12) asd2=scale*9.00E-12 asd3=-6.1585 asd4=3.1215
+ asd5=scale*6.37E-12 asd6=-42.978 asd7=28.23
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.4)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
************************************************************************
.subckt EPC8009 gatein drainin sourcein
.param scale=50/25
.param aWg=scale*25 A1=scale*1.593 k2=2.03 k3=0.177 rpara=0.16/scale
+ aITc=0.0036 arTc=-0.0036 x0_0=1.02 x0_1=0.1789 x0_1_TC=0.004
+ dgs1=scale*4.3e-7 dgs2=scale*2.6e-13 dgs3=.8 dgs4=.23
+ ags1=(scale*17.8E-12 + 11.4E-12) ags2=scale*8.714E-12 ags3=1.51 ags4=0.22
+ ags5=scale*-1.62E-13 ags6=-4.86 ags7=3.092
+ agd1=scale*0.194E-12 agd2=scale*4.409E-12 agd3=-0.714 agd4=1.366
+ agd5=scale*0.863E-12 agd6=-5.999 agd7=3.914
+ asd1=(scale*4.404E-12 + 1.81E-12) asd2=scale*10.33E-12 asd3=-4.105 asd4=3.001
+ asd5=scale*6.68E-12 asd6=-31.31 asd7=20.89
rd drainin drain {(0.75*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(0.25*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(.4)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-k2)/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-k2)/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7)) )
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2027 gatein drainin sourcein
.param aWg=123 A1=1.8829 k2=2.388 k3=0.15 rpara=0.25994 rpara_s_factor=0.15
+ aITc=0.005254 arTc=-0.0074 k2Tc=0.00059 x0_0=0.85884 x0_1=4.4808e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.7415e-10 ags2=1.7468e-10 ags3=1.9365 ags4=0.16754
+ ags5=-1.849e-13 ags6=-2.1755 ags7=1.7445
+ agd1=1.5091e-14 agd2=6.0472e-12 agd3=-0.68602 agd4=1.5441
+ agd5=1.2653e-11 agd6=-6.2275 agd7=7.6853
+ agd8=2.162e-12 agd9=-18.949 agd10=56.282
+ asd1=1.358e-11 asd2=1.062e-10 asd3=-22.271 asd4=7.7269
+ asd5=1.3561e-10 asd6=-0.53242 asd7=139.63 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2001C gatein drainin sourcein
.param aWg=1077 A1=40.061 k2=2.1957 k3=0.15 rpara=0.0042218 rpara_s_factor=0.15
+ aITc=0.004284 arTc=-0.0063 k2Tc=0.00062 x0_0=1.6002 x0_1=3.0657e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.5616e-10 ags2=5.642e-10 ags3=1.7569 ags4=0.22573
+ ags5=-1.5162e-13 ags6=-3.1935 ags7=4.0559
+ agd1=8.2284e-13 agd2=7.6148e-11 agd3=-1.3488 agd4=0.69532
+ agd5=6.0196e-11 agd6=-6.7475 agd7=5.1233
+ agd8=1.1352e-11 agd9=-100.12 agd10=32.114
+ asd1=2.4458e-10 asd2=3.7807e-10 asd3=-14.17 asd4=4.6958
+ asd5=6.0641e-10 asd6=-0.77787 asd7=55.115 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2014C gatein drainin sourcein
.param aWg=385 A1=13.125 k2=2.2767 k3=0.15 rpara=0.0074278 rpara_s_factor=0.15
+ aITc=0.003721 arTc=-0.0061 k2Tc=0.0006 x0_0=1.7025 x0_1=4.8632e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.1427e-10 ags2=1.2058e-10 ags3=1.9336 ags4=0.20501
+ ags5=-1.5581e-13 ags6=-1.913 ags7=1.848
+ agd1=3.6643e-13 agd2=5.8313e-11 agd3=-0.95656 agd4=2.4275
+ agd5=1.0611e-11 agd6=-4.5909 agd7=21.025
+ agd8=3.1327e-12 agd9=-91.363 agd10=33.365
+ asd1=7.1887e-11 asd2=1.4655e-10 asd3=-4.8515 asd4=5.7344
+ asd5=1.3471e-10 asd6=-0.83699 asd7=53.776 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2010C gatein drainin sourcein
.param aWg=600 A1=25.402 k2=2.3482 k3=0.15 rpara=0.0156 rpara_s_factor=0.15
+ aITc=0.004992 arTc=-0.0064 k2Tc=0.0006 x0_0=2.1476 x0_1=3.6201e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=3.8097e-10 ags2=2.2258e-10 ags3=1.9281 ags4=0.18872
+ ags5=-1.6423e-13 ags6=-2.3868 ags7=3.2345
+ agd1=1.3902e-12 agd2=4.1297e-11 agd3=-1.0928 agd4=0.83048
+ agd5=4.0456e-11 agd6=-7.3569 agd7=5.837
+ agd8=3.9811e-12 agd9=-36.746 agd10=28.007
+ asd1=1.7554e-10 asd2=3.8174e-10 asd3=-18.355 asd4=4.5715
+ asd5=4.911e-10 asd6=-0.78676 asd7=50.508 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2012C gatein drainin sourcein
.param aWg=146 A1=4.6405 k2=2.0977 k3=0.15 rpara=0.057945 rpara_s_factor=0.15
+ aITc=0.004536 arTc=-0.0063 k2Tc=0.00056 x0_0=1.6719 x0_1=4.9768e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=9.9405e-11 ags2=5.8214e-11 ags3=1.9915 ags4=0.20221
+ ags5=-1.9033e-13 ags6=-2.536 ags7=1.9229
+ agd1=2.9188e-13 agd2=8.3818e-12 agd3=-0.87269 agd4=1.1499
+ agd5=1.5216e-11 agd6=-5.5931 agd7=5.6988
+ agd8=1.8161e-12 agd9=-19.731 agd10=27.892
+ asd1=4.7223e-11 asd2=9.278e-11 asd3=-18.906 asd4=5.9691
+ asd5=1.2349e-10 asd6=-0.80227 asd7=52.88 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC8010 gatein drainin sourcein
.param aWg=50.4 A1=1.6515 k2=2.4975 k3=0.15 rpara=0.081123 rpara_s_factor=0.15
+ aITc=0.004095 arTc=-0.0065 k2Tc=0.00064 x0_0=1.3716 x0_1=3.6041e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=4.2257e-11 ags2=2.0816e-11 ags3=2.0553 ags4=0.15446
+ ags5=-7.9932e-14 ags6=-4.8519 ags7=0.43127
+ agd1=1.0784e-13 agd2=1.7212e-12 agd3=-0.14919 agd4=1.1874
+ agd5=6.2873e-12 agd6=-2.7494 agd7=5.3606
+ agd8=5.9255e-13 agd9=-34.999 agd10=26.1
+ asd1=1.6766e-11 asd2=2.0236e-11 asd3=-34.436 asd4=7.9896
+ asd5=4.6639e-11 asd6=-0.19398 asd7=23.58 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2019 gatein drainin sourcein
.param aWg=277 A1=9.2486 k2=2.111 k3=0.15 rpara=0.02974 rpara_s_factor=0.15
+ aITc=0.004615 arTc=-0.0065 k2Tc=0.00054 x0_0=1.7531 x0_1=4.9125e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.0042e-10 ags2=9.6497e-11 ags3=1.8454 ags4=0.1739
+ ags5=-4.093e-14 ags6=-5.5507 ags7=0.28143
+ agd1=4.6419e-13 agd2=1.8162e-12 agd3=-0.10754 agd4=1.4625
+ agd5=3.5962e-11 agd6=-3.7643 agd7=5.5568
+ agd8=2.1166e-12 agd9=-31.198 agd10=32.013
+ asd1=6.9149e-11 asd2=1.7469e-10 asd3=-20.764 asd4=4.72
+ asd5=2.1901e-10 asd6=-0.20196 asd7=67.825 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2102Q1 gatein drainin sourcein
.param aWg=1434 A1=51.5 k2=2.45 k3=0.15 rpara=0.00194 rpara_s_factor=0.25
+ aITc=0.0043875 arTc=-0.0065 k2Tc=0.00068 x0_0=1.48 x0_1=3.69e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=8.2254e-10 ags2=3.9319e-10 ags3=1.9964 ags4=0.22686
+ ags5=-3.1836e-10 ags6=5.6146 ags7=7.6636
+ agd1=8.718e-13 agd2=8.7999e-11 agd3=-1.1082 agd4=0.89812
+ agd5=1.066e-10 agd6=-4.828 agd7=6.463
+ agd8=1.0995e-11 agd9=-66.287 agd10=11.213
+ asd1=6.9478e-11 asd2=6.4451e-10 asd3=-7.1022 asd4=9.6056
+ asd5=9.6138e-10 asd6=-0.36833 asd7=74.16 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2102Q2 gatein drainin sourcein
.param aWg=1434 A1=51.5 k2=2.45 k3=0.15 rpara=0.00194 rpara_s_factor=0.25
+ aITc=0.0043875 arTc=-0.0065 k2Tc=0.00068 x0_0=1.48 x0_1=3.69e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=8.2368e-10 ags2=3.8624e-10 ags3=2.0029 ags4=0.2127
+ ags5=-3.2274e-10 ags6=5.7219 ags7=7.8549
+ agd1=7.1023e-13 agd2=1.0542e-10 agd3=-1.0948 agd4=0.92986
+ agd5=9.2983e-11 agd6=-5.9105 agd7=7.1379
+ agd8=1.159e-11 agd9=-70.214 agd10=11.565
+ asd1=7.8042e-11 asd2=9.5692e-10 asd3=-3.3816 asd4=7.0561
+ asd5=1.6494e-09 asd6=-0.35125 asd7=53.231 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2103Q1 gatein drainin sourcein
.param aWg=1298 A1=49 k2=2.2874 k3=0.15 rpara=0.00254 rpara_s_factor=0.25
+ aITc=0.0043875 arTc=-0.0065 k2Tc=0.00068 x0_0=1.4783 x0_1=4.4017e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.0861e-10 ags2=3.3685e-10 ags3=1.7339 ags4=0.17596
+ ags5=-2.1375e-14 ags6=-7.0286 ags7=0.26147
+ agd1=1.3995e-12 agd2=2.6153e-12 agd3=-0.20158 agd4=1.1241
+ agd5=2.27e-10 agd6=-0.21276 agd7=3.8076
+ agd8=2.4209e-11 agd9=-11.925 agd10=37.609
+ asd1=8.3456e-11 asd2=7.5856e-10 asd3=-11.779 asd4=9.9441
+ asd5=7.985e-10 asd6=-0.18165 asd7=118.16 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2103Q2 gatein drainin sourcein
.param aWg=1298 A1=49 k2=2.2874 k3=0.15 rpara=0.00254 rpara_s_factor=0.25
+ aITc=0.0043875 arTc=-0.0065 k2Tc=0.00068 x0_0=1.4783 x0_1=4.4017e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.0078e-10 ags2=3.1662e-10 ags3=1.7105 ags4=0.19446
+ ags5=-2.1671e-14 ags6=-3.865 ags7=0.33826
+ agd1=1.8876e-12 agd2=6.7268e-11 agd3=-0.24874 agd4=0.62426
+ agd5=1.7972e-10 agd6=-0.29977 agd7=4.5639
+ agd8=2.4137e-11 agd9=-13.193 agd10=32.791
+ asd1=5.8071e-11 asd2=1.243e-09 asd3=-4.106 asd4=9.0451
+ asd5=1.4951e-09 asd6=-0.099663 asd7=75.937 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2007C gatein drainin sourcein
.param aWg=266 A1=8.576 k2=2.3986 k3=0.15 rpara=0.016699 rpara_s_factor=0.25
+ aITc=0.004095 arTc=-0.0063 k2Tc=0.00062 x0_0=1.4135 x0_1=4.0922e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.6968e-10 ags2=1.0495e-10 ags3=1.9269 ags4=0.17257
+ ags5=-3.6597e-14 ags6=-4.5217 ags7=0.28001
+ agd1=5.8475e-13 agd2=1.9976e-12 agd3=-0.1522 agd4=1.202
+ agd5=3.7345e-11 agd6=-2.1895 agd7=4.81
+ agd8=3.7804e-12 agd9=-32.125 agd10=28.411
+ asd1=4.8917e-11 asd2=1.0935e-10 asd3=-14.551 asd4=7.4975
+ asd5=1.9866e-10 asd6=-0.2015 asd7=55.817 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2016C gatein drainin sourcein
.param aWg=506 A1=16.068 k2=2.1706 k3=0.15 rpara=0.0090152 rpara_s_factor=0.15
+ aITc=0.00377 arTc=-0.0058 k2Tc=0.00053 x0_0=1.4801 x0_1=2.9429e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=3.5349e-10 ags2=2.1671e-10 ags3=1.8658 ags4=0.18564
+ ags5=-2.121e-13 ags6=-4.3456 ags7=4.5809
+ agd1=9.6492e-13 agd2=4.1526e-11 agd3=-1.0223 agd4=0.84414
+ agd5=3.4461e-11 agd6=-7.2589 agd7=4.7456
+ agd8=4.3656e-12 agd9=-51.814 agd10=22.587
+ asd1=9.9513e-11 asd2=2.2884e-10 asd3=-14.313 asd4=6.5135
+ asd5=3.4213e-10 asd6=-0.76983 asd7=61.161 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2104Q1 gatein drainin sourcein
.param aWg=1111 A1=53.406 k2=2.1707 k3=0.15 rpara=0.0039625 rpara_s_factor=0.2
+ aITc=0.004408 arTc=-0.0058 k2Tc=0.0006 x0_0=1.7659 x0_1=4.1275e-06 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.7635e-10 ags2=4.3875e-10 ags3=1.8678 ags4=0.168
+ ags5=-3.1157e-14 ags6=-3.2745 ags7=0.19138
+ agd1=5.9409e-13 agd2=1.4573e-12 agd3=-0.16669 agd4=0.56362
+ agd5=1.1307e-10 agd6=-4.1184 agd7=6.3543
+ agd8=1.2215e-11 agd9=-49.505 agd10=38.282
+ asd1=7.9547e-11 asd2=4.652e-10 asd3=-17.429 asd4=6.2364
+ asd5=9.8556e-10 asd6=-0.20622 asd7=93.186 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2104Q2 gatein drainin sourcein
.param aWg=1111 A1=53.406 k2=2.1707 k3=0.15 rpara=0.0039625 rpara_s_factor=0.2
+ aITc=0.004408 arTc=-0.0058 k2Tc=0.0006 x0_0=1.7659 x0_1=4.1275e-06 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.7676e-10 ags2=4.3819e-10 ags3=1.8837 ags4=0.19523
+ ags5=-3.758e-14 ags6=-2.6341 ags7=0.17296
+ agd1=7.5318e-13 agd2=1.1997e-12 agd3=-0.18557 agd4=0.52934
+ agd5=1.2896e-10 agd6=-2.7909 agd7=6.3897
+ agd8=1.3232e-11 agd9=-41.264 agd10=39.911
+ asd1=8.4151e-11 asd2=8.2229e-10 asd3=-13.002 asd4=8.8345
+ asd5=1.3645e-09 asd6=-0.22182 asd7=94.724 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2035 gatein drainin sourcein
.param aWg=159 A1=5.5332 k2=2.2219 k3=0.15 rpara=0.025065 rpara_s_factor=0.29
+ aITc=0.004104 arTc=-0.0054 k2Tc=0.0006 x0_0=1.5473 x0_1=1.0199e-06 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=9.3156e-11 ags2=5.1011e-11 ags3=1.6846 ags4=0.19858
+ ags5=-4.059e-14 ags6=-4.022 ags7=0.10106
+ agd1=2.9762e-13 agd2=1.3222e-12 agd3=-0.11038 agd4=0.51625
+ agd5=1.9347e-11 agd6=-2.3092 agd7=6.4081
+ agd8=2.468e-12 agd9=-25.055 agd10=28.436
+ asd1=3.7411e-11 asd2=4.5502e-11 asd3=-9.3759 asd4=8.3695
+ asd5=7.8779e-11 asd6=-0.10977 asd7=22.842 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2036 gatein drainin sourcein
.param aWg=123 A1=4.7499 k2=2.0338 k3=0.15 rpara=0.039128 rpara_s_factor=0.23
+ aITc=0.004104 arTc=-0.0054 k2Tc=0.0006 x0_0=1.6588 x0_1=3.8735e-06 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.4257e-11 ags2=4.0219e-11 ags3=1.8702 ags4=0.19695
+ ags5=-4.0069e-14 ags6=-3.674 ags7=0.093656
+ agd1=2.6555e-13 agd2=1.0757e-12 agd3=-0.10439 agd4=0.60281
+ agd5=1.4576e-11 agd6=-2.3244 agd7=6.1875
+ agd8=1.7475e-12 agd9=-20.723 agd10=28.685
+ asd1=3.6091e-11 asd2=4.7586e-11 asd3=-9.7731 asd4=8.7493
+ asd5=9.0279e-11 asd6=-0.12324 asd7=28.057 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2030 gatein drainin sourcein
.param aWg=3297 A1=137.93 k2=2.2162 k3=0.15 rpara=0.0013887 rpara_s_factor=0.35
+ aITc=0.003828 arTc=-0.0066 k2Tc=0.00068 x0_0=1.6983 x0_1=5.1623e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.8437e-09 ags2=1.1261e-09 ags3=1.726 ags4=0.23263
+ ags5=-1.1082e-13 ags6=-1.751 ags7=4.8117
+ agd1=1.052e-12 agd2=2.7156e-10 agd3=-0.52231 agd4=3.3066
+ agd5=1.5638e-10 agd6=-11.983 agd7=5.1613
+ agd8=5.5042e-11 agd9=-43.087 agd10=28.386
+ asd1=5.0914e-10 asd2=1.1516e-09 asd3=-18.363 asd4=5.9459
+ asd5=1.0429e-09 asd6=-0.24465 asd7=63.247 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2031 gatein drainin sourcein
.param aWg=3024 A1=129.29 k2=2.3001 k3=0.15 rpara=0.0015572 rpara_s_factor=0.32
+ aITc=0.003828 arTc=-0.0066 k2Tc=0.00068 x0_0=1.885 x0_1=7.0976e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.7262e-09 ags2=1.009e-09 ags3=1.6446 ags4=0.2374
+ ags5=-9.959e-14 ags6=-1.8207 ags7=4.786
+ agd1=9.4715e-13 agd2=2.7125e-10 agd3=-0.51657 agd4=3.2123
+ agd5=1.2528e-10 agd6=-12.494 agd7=4.9133
+ agd8=4.2697e-11 agd9=-49.348 agd10=33.476
+ asd1=4.2791e-10 asd2=1.0791e-09 asd3=-16.978 asd4=5.4375
+ asd5=1.1207e-09 asd6=-0.23927 asd7=67.326 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2107Q1 gatein drainin sourcein
.param aWg=25.6 A1=0.82573 k2=2.4 k3=0.15 rpara=0.16548 rpara_s_factor=0.21
+ aITc=0.00325 arTc=-0.0065 k2Tc=0.0006 x0_0=1.3601 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.0135e-11 ags2=1.0679e-11 ags3=1.9847 ags4=0.17128
+ ags5=-1.2878e-14 ags6=-0.15438 ags7=0.21661
+ agd1=9.1028e-17 agd2=3.4521e-13 agd3=-0.29052 agd4=42.658
+ agd5=2.6835e-12 agd6=-10.638 agd7=4.0686
+ agd8=1.0257e-13 agd9=-429.04 agd10=0.98892
+ asd1=3.3451e-12 asd2=1.663e-11 asd3=-0.36247 asd4=73.523
+ asd5=1.6027e-11 asd6=-21.224 asd7=3.0165 rg_value=0.7
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2107Q2 gatein drainin sourcein
.param aWg=25.6 A1=0.82573 k2=2.4 k3=0.15 rpara=0.16548 rpara_s_factor=0.21
+ aITc=0.00325 arTc=-0.0065 k2Tc=0.0006 x0_0=1.3601 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.0135e-11 ags2=1.0679e-11 ags3=1.9847 ags4=0.17128
+ ags5=-1.2878e-14 ags6=-0.15438 ags7=0.21661
+ agd1=9.1028e-17 agd2=3.4521e-13 agd3=-0.29052 agd4=42.658
+ agd5=2.6835e-12 agd6=-10.638 agd7=4.0686
+ agd8=1.0257e-13 agd9=-429.04 agd10=0.98892
+ asd1=3.3451e-12 asd2=1.663e-11 asd3=-0.36247 asd4=73.523
+ asd5=1.6027e-11 asd6=-21.224 asd7=3.0165 rg_value=0.7
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2107Q3 gatein drainin sourcein
.param aWg=3 A1=0.12 k2=2.6 k3=0.13375 rpara=1.6157 rpara_s_factor=0.21
+ aITc=0.00441 arTc=-0.0063 k2Tc=0.0006 x0_0=1.4954 x0_1=0 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 dgs5=2.5e-3
+ dgs6=-1.985 dgs7=8e-2
+ ags1=6.8435e-12 ags2=1.0152e-12 ags3=2.0494 ags4=0.14922
+ ags5=1.946e-14 ags6=-2.1782 ags7=0.026257
+ agd1=5.4952e-15 agd2=6.5996e-14 agd3=-0.038873 agd4=0.67311
+ agd5=5.3028e-13 agd6=-1.9623 agd7=5.7917
+ agd8=4.5932e-14 agd9=-6.0586 agd10=39.324
+ asd1=1.0863e-12 asd2=1.6683e-12 asd3=-22.288 asd4=4.8329
+ asd5=2.2545e-12 asd6=-0.084303 asd7=36.279 rg_value=4.8
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + x0_0*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + x0_0*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>0,
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))),
+ (-dgs5*log(1+exp((-v(gate,source)+dgs6)/dgs7))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2108Q1 gatein drainin sourcein
.param aWg=37 A1=1.1037 k2=2.6 k3=0.15 rpara=0.08208 rpara_s_factor=0.29
+ aITc=0.003 arTc=-0.006 k2Tc=0.0005 x0_0=1.3063 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.5798e-11 ags2=1.4187e-11 ags3=2.0567 ags4=0.18779
+ ags5=-1.9577e-14 ags6=-0.25304 ags7=0.081694
+ agd1=9.4181e-17 agd2=6.9299e-13 agd3=-0.49478 agd4=27.782
+ agd5=4.5953e-12 agd6=-6.2284 agd7=4.9363
+ agd8=1.7238e-13 agd9=-148.9 agd10=1.2905
+ asd1=7.3307e-12 asd2=1.746e-11 asd3=-0.15576 asd4=21.261
+ asd5=1.2638e-11 asd6=-21.015 asd7=3.1237 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2108Q2 gatein drainin sourcein
.param aWg=37 A1=1.1037 k2=2.6 k3=0.15 rpara=0.08208 rpara_s_factor=0.29
+ aITc=0.003 arTc=-0.006 k2Tc=0.0005 x0_0=1.3063 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.5798e-11 ags2=1.4187e-11 ags3=2.0567 ags4=0.18779
+ ags5=-1.9577e-14 ags6=-0.25304 ags7=0.081694
+ agd1=9.4181e-17 agd2=6.9299e-13 agd3=-0.49478 agd4=27.782
+ agd5=4.5953e-12 agd6=-6.2284 agd7=4.9363
+ agd8=1.7238e-13 agd9=-148.9 agd10=1.2905
+ asd1=7.3307e-12 asd2=1.746e-11 asd3=-0.15576 asd4=21.261
+ asd5=1.2638e-11 asd6=-21.015 asd7=3.1237 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2108Q3 gatein drainin sourcein
.param aWg=3 A1=0.12 k2=2.6 k3=0.13375 rpara=1.6157 rpara_s_factor=0.21
+ aITc=0.00441 arTc=-0.0063 k2Tc=0.0006 x0_0=1.4954 x0_1=0 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 dgs5=2.5e-3
+ dgs6=-1.985 dgs7=8e-2
+ ags1=6.8435e-12 ags2=1.0152e-12 ags3=2.0494 ags4=0.14922
+ ags5=1.946e-14 ags6=-2.1782 ags7=0.026257
+ agd1=5.4952e-15 agd2=6.5996e-14 agd3=-0.038873 agd4=0.67311
+ agd5=5.3028e-13 agd6=-1.9623 agd7=5.7917
+ agd8=4.5932e-14 agd9=-6.0586 agd10=39.324
+ asd1=1.0863e-12 asd2=1.6683e-12 asd3=-22.288 asd4=4.8329
+ asd5=2.2545e-12 asd6=-0.084303 asd7=36.279 rg_value=4.8
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + x0_0*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + x0_0*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>0,
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))),
+ (-dgs5*log(1+exp((-v(gate,source)+dgs6)/dgs7))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2106Q1 gatein drainin sourcein
.param aWg=120 A1=5.219 k2=2.2749 k3=0.15 rpara=0.043908 rpara_s_factor=0.23
+ aITc=0.004408 arTc=-0.0058 k2Tc=0.001 x0_0=2.0294 x0_1=9.7602e-06 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.4084e-11 ags2=3.9446e-11 ags3=1.8249 ags4=0.21159
+ ags5=-3.9202e-14 ags6=-3.9122 ags7=0.074888
+ agd1=5.4864e-13 agd2=9.5687e-13 agd3=-0.13512 agd4=0.81829
+ agd5=1.8266e-11 agd6=-1.6761 agd7=7.1801
+ agd8=1.2504e-12 agd9=-19.882 agd10=26.976
+ asd1=3.0456e-11 asd2=4.154e-11 asd3=-20.878 asd4=4.8837
+ asd5=5.2476e-11 asd6=-0.16438 asd7=35.311 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2106Q2 gatein drainin sourcein
.param aWg=120 A1=5.219 k2=2.2749 k3=0.15 rpara=0.043908 rpara_s_factor=0.23
+ aITc=0.004408 arTc=-0.0058 k2Tc=0.001 x0_0=2.0294 x0_1=9.7602e-06 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.7919e-11 ags2=3.9696e-11 ags3=1.7434 ags4=0.1915
+ ags5=-4.155e-14 ags6=-3.7287 ags7=0.093649
+ agd1=5.1137e-13 agd2=1.0572e-12 agd3=-0.12339 agd4=0.6206
+ agd5=1.9003e-11 agd6=-1.5416 agd7=7.2815
+ agd8=1.2328e-12 agd9=-21.484 agd10=26.743
+ asd1=4.1019e-11 asd2=4.9296e-11 asd3=-16.913 asd4=5.1837
+ asd5=8.731e-11 asd6=-0.14522 asd7=30.734 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2110Q1 gatein drainin sourcein
.param aWg=134 A1=4.2933 k2=2.229 k3=0.15 rpara=0.031245 rpara_s_factor=0.21
+ aITc=0.004256 arTc=-0.0056 k2Tc=0.001 x0_0=1.4667 x0_1=3.4138e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=8.0559e-11 ags2=4.3557e-11 ags3=1.894 ags4=0.23066
+ ags5=-1.5122e-13 ags6=-0.48869 ags7=2.4093
+ agd1=4.9882e-13 agd2=1.3782e-11 agd3=-0.2309 agd4=7.4126
+ agd5=8.6182e-12 agd6=-1.0055 agd7=7.3635
+ agd8=1.4512e-12 agd9=-17.562 agd10=25.341
+ asd1=3.7514e-11 asd2=5.8979e-11 asd3=-21.421 asd4=5.2521
+ asd5=5.8474e-11 asd6=-0.14883 asd7=45.095 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2110Q2 gatein drainin sourcein
.param aWg=134 A1=4.2933 k2=2.229 k3=0.15 rpara=0.031245 rpara_s_factor=0.21
+ aITc=0.004256 arTc=-0.0056 k2Tc=0.001 x0_0=1.4667 x0_1=3.4138e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=8.0559e-11 ags2=4.3557e-11 ags3=1.894 ags4=0.23066
+ ags5=-1.5122e-13 ags6=-0.48869 ags7=2.4093
+ agd1=4.9882e-13 agd2=1.3782e-11 agd3=-0.2309 agd4=7.4126
+ agd5=8.6182e-12 agd6=-1.0055 agd7=7.3635
+ agd8=1.4512e-12 agd9=-17.562 agd10=25.341
+ asd1=3.7514e-11 asd2=5.8979e-11 asd3=-21.421 asd4=5.2521
+ asd5=5.8474e-11 asd6=-0.14883 asd7=45.095 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2025 gatein drainin sourcein
.param aWg=198 A1=9.2664 k2=2.7052 k3=0.15 rpara=0.08249 rpara_s_factor=0.1
+ aITc=0.005472 arTc=-0.0076 k2Tc=0.0009 x0_0=2.3861 x0_1=7.8813e-07 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.9665e-10 ags2=1.3498e-10 ags3=1.9456 ags4=0.20157
+ ags5=-1.0341e-13 ags6=-0.47874 ags7=3.1147
+ agd1=6.3812e-14 agd2=2.0183e-11 agd3=-0.29442 agd4=7.3426
+ agd5=1.842e-11 agd6=-1.4148 agd7=7.9242
+ agd8=1.775e-12 agd9=-11.368 agd10=57.603
+ asd1=3.2165e-11 asd2=1.9163e-10 asd3=-24.679 asd4=4.2072
+ asd5=1.5505e-10 asd6=-0.14583 asd7=101.9 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source),0.2)*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + max(x0_0+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain),0.2)*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))) )
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.5*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.5*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2032 gatein drainin sourcein
.param aWg=2267 A1=86.5701 k2=2.2735 k3=0.15 rpara=0.0023407 rpara_s_factor=0.24
+ aITc=0.003528 arTc=-0.0072 k2Tc=0.0009 x0_0=1.5734 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.2587e-09 ags2=6.1396e-10 ags3=1.9659 ags4=0.15395
+ ags5=-3.0481e-14 ags6=-9.0808 ags7=1.0954
+ agd1=4.8796e-15 agd2=3.7509e-11 agd3=-0.09643 agd4=66.42
+ agd5=2.5403e-10 agd6=-3.6436 agd7=2.5221
+ agd8=2.7741e-12 agd9=-89.742 agd10=31.602
+ asd1=5.5619e-10 asd2=9.3829e-10 asd3=-19.814 asd4=4.7172
+ asd1=5.5619e-10 asd2=9.3829e-10 asd3=-19.814 asd4=4.7172
+ asd5=9.9459e-10 asd6=-0.53539 asd7=39.857 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2015C gatein drainin sourcein
.param aWg=1566 A1=59.2261 k2=2.2992 k3=0.15 rpara=0.0022051 rpara_s_factor=0.35
+ aITc=0.003381 arTc=-0.0069 k2Tc=0.00087 x0_0=1.5604 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=9.6082e-10 ags2=6.3975e-10 ags3=1.7888 ags4=0.22483
+ ags5=-3.2617e-14 ags6=-8.5065 ags7=1.0672
+ agd1=6.2778e-15 agd2=5.7639e-11 agd3=-0.095939 agd4=20.99
+ agd5=1.3737e-10 agd6=-4.6799 agd7=2.0184
+ agd8=2.388e-12 agd9=-68.436 agd10=31.367
+ asd1=2.6484e-10 asd2=4.2816e-10 asd3=-19.424 asd4=4.6356
+ asd5=5.9878e-10 asd6=-0.53625 asd7=39.206 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2021 gatein drainin sourcein
.param aWg=2849 A1=108.1593 k2=2.2982 k3=0.15 rpara=0.0012722 rpara_s_factor=0.24
+ aITc=0.003822 arTc=-0.0078 k2Tc=0.001 x0_0=1.5643 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.6258e-09 ags2=8.3701e-10 ags3=1.8201 ags4=0.18484
+ ags5=-3.0863e-14 ags6=-8.5249 ags7=1.1179
+ agd1=5.0382e-15 agd2=4.7295e-11 agd3=-0.12536 agd4=65.257
+ agd5=3.2025e-10 agd6=-3.6227 agd7=2.5292
+ agd8=3.3921e-12 agd9=-98.015 agd10=31.43
+ asd1=5.5388e-10 asd2=9.9442e-10 asd3=-15.795 asd4=5.1318
+ asd5=1.4567e-09 asd6=-0.50233 asd7=39.361 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2029 gatein drainin sourcein
.param aWg=2423 A1=92.6099 k2=2.2801 k3=0.15 rpara=0.0018835 rpara_s_factor=0.26
+ aITc=0.003675 arTc=-0.0075 k2Tc=0.0009 x0_0=1.5783 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.3889e-09 ags2=7.3459e-10 ags3=1.9508 ags4=0.18462
+ ags5=-3.3146e-14 ags6=-8.644 ags7=1.2264
+ agd1=5.2848e-15 agd2=4.0961e-11 agd3=-0.099965 agd4=66.414
+ agd5=2.7181e-10 agd6=-3.6235 agd7=2.5271
+ agd8=2.6167e-12 agd9=-90.595 agd10=36.673
+ asd1=4.7429e-10 asd2=8.1315e-10 asd3=-16.011 asd4=5.6337
+ asd5=1.2258e-09 asd6=-0.6543 asd7=37.659 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2020 gatein drainin sourcein
.param aWg=3160 A1=120.8515 k2=2.2881 k3=0.15 rpara=0.0009908 rpara_s_factor=0.26
+ aITc=0.003822 arTc=-0.0078 k2Tc=0.001 x0_0=1.5736 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.7554e-09 ags2=1.0469e-09 ags3=1.9499 ags4=0.21544
+ ags5=-3.4239e-14 ags6=-11.708 ags7=1.0562
+ agd1=4.6777e-15 agd2=5.5597e-11 agd3=-0.12422 agd4=59.856
+ agd5=3.4899e-10 agd6=-3.7046 agd7=2.4793
+ agd8=3.052e-12 agd9=-91.363 agd10=28.675
+ asd1=6.0016e-10 asd2=9.2575e-10 asd3=-17.064 asd4=4.4806
+ asd5=1.1622e-09 asd6=-0.48089 asd7=34.427 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2034 gatein drainin sourcein
.param aWg=1423 A1=50.671 k2=2.3904 k3=0.15 rpara=0.0057993 rpara_s_factor=0.15
+ aITc=0.004067 arTc=-0.0083 k2Tc=0.00098 x0_0=2.1411 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=9.4978e-10 ags2=4.8825e-10 ags3=1.8529 ags4=0.13522
+ ags5=-2.1168e-14 ags6=-0.70387 ags7=0.52608
+ agd1=1.5053e-15 agd2=1.6904e-11 agd3=-0.17233 agd4=35.559
+ agd5=1.3365e-10 agd6=-9.6119 agd7=3.0282
+ agd8=2.6875e-12 agd9=-43.198 agd10=4643.8
+ asd1=3.6784e-10 asd2=9.9605e-10 asd3=-17.119 asd4=1.3382
+ asd5=7.0345e-10 asd6=-0.12876 asd7=46.843 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2024 gatein drainin sourcein
.param aWg=3726 A1=153.73 k2=2.5686 k3=0.15 rpara=0.000789 rpara_s_factor=0.34
+ aITc=0.00345 arTc=-0.0069 k2Tc=0.00096 x0_0=1.4055 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.8938e-09 ags2=8.9424e-10 ags3=1.6708 ags4=0.17585
+ ags5=-3.6662e-14 ags6=-7.044 ags7=1.174
+ agd1=4.7312e-15 agd2=8.2176e-11 agd3=-0.083612 agd4=19.407
+ agd5=6.2668e-10 agd6=-0.8818 agd7=3.7134
+ agd8=3.1937e-12 agd9=-233.16 agd10=34.135
+ asd1=7.7782e-10 asd2=1.1148e-09 asd3=-17.49 asd4=4.5403
+ asd5=1.0766e-09 asd6=-0.63446 asd7=37.912 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2022 gatein drainin sourcein
.param aWg=2599 A1=83.991 k2=2.4169 k3=0.15 rpara=0.0016862 rpara_s_factor=0.24
+ aITc=0.0039 arTc=-0.0078 k2Tc=0.001 x0_0=1.5866 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.3964e-09 ags2=6.2652e-10 ags3=1.9489 ags4=0.1161
+ ags5=-3.1014e-14 ags6=-10.01 ags7=0.97936
+ agd1=6.7965e-15 agd2=2.3905e-11 agd3=-0.082452 agd4=20.241
+ agd5=5.1752e-10 agd6=-0.94707 agd7=4.5019
+ agd8=4.6034e-12 agd9=-257.28 agd10=32.686
+ asd1=6.0339e-10 asd2=1.1355e-09 asd3=-17.177 asd4=3.8037
+ asd5=1.0489e-09 asd6=-0.5384 asd7=38.828 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2033 gatein drainin sourcein
.param aWg=1740 A1=60.027 k2=2.5065 k3=0.15 rpara=0.0039382 rpara_s_factor=0.19
+ aITc=0.00312 arTc=-0.0078 k2Tc=0.001 x0_0=1.9362 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.1552e-09 ags2=6.0365e-10 ags3=2.0692 ags4=0.1213
+ ags5=-2.1644e-14 ags6=-0.75165 ags7=0.49174
+ agd1=1.4655e-15 agd2=3.144e-11 agd3=-0.1809 agd4=52.212
+ agd5=1.8029e-10 agd6=-10.38 agd7=3.3901
+ agd8=5.3489e-12 agd9=-42.876 agd10=4829.2
+ asd1=4.4252e-10 asd2=8.6957e-10 asd3=-18.709 asd4=1.4327
+ asd5=7.1098e-10 asd6=-0.12467 asd7=37.731 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2038 gatein drainin sourcein
.param aWg=3 A1=0.12 k2=2.6 k3=0.13375 rpara=1.6157 rpara_s_factor=0.21
+ aITc=0.00441 arTc=-0.0063 k2Tc=0.0006 x0_0=1.4954 x0_0_TC=0 x0_1=1.0e-6 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23 dgs5=2.5e-3
+ dgs6=-1.985 dgs7=8e-2
+ ags1=6.8435e-12 ags2=1.0152e-12 ags3=2.0494 ags4=0.14922
+ ags5=1.946e-14 ags6=-2.1782 ags7=0.026257
+ agd1=5.4952e-15 agd2=6.5996e-14 agd3=-0.038873 agd4=0.67311
+ agd5=5.3028e-13 agd6=-1.9623 agd7=5.7917
+ agd8=4.5932e-14 agd9=-6.0586 agd10=39.324
+ asd1=1.0863e-12 asd2=1.6683e-12 asd3=-22.288 asd4=4.8329
+ asd5=2.2545e-12 asd6=-0.084303 asd7=36.279 rg_value=4.8
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>0,
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))),
+ (-dgs5*log(1+exp((-v(gate,source)+dgs6)/dgs7))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2047 gatein drainin sourcein
.param aWg=1083 A1=29.635 k2=2.6153 k3=0.155 rpara=0.0047614 rpara_s_factor=0.23
+ aITc=0.00348 arTc=-0.0058 k2Tc=0.0009 x0_0=2 x0_1=-0.25 x0_0_TC=-0.004 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=8.6923e-10 ags2=6.4779e-10 ags3=1.8122 ags4=0.16934
+ ags5=-1.5684e-10 ags6=-8.7568 ags7=7.0277
+ agd1=6.5618e-15 agd2=9.9309e-12 agd3=-11.084 agd4=119.45
+ agd5=1.1925e-10 agd6=-10.365 agd7=4.7532
+ agd8=9.9723e-13 agd9=-132.36 agd10=30.555
+ asd1=3.0434e-10 asd2=3.5461e-10 asd3=-0.84421 asd4=82.226
+ asd5=6.1413e-10 asd6=-19.432 asd7=2.6181 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2039 gatein drainin sourcein
.param aWg=330 A1=10.676 k2=2.48 k3=0.15 rpara=0.014026 rpara_s_factor=0.26
+ aITc=0.0036 arTc=-0.006 k2Tc=0.0005 x0_0=1.6927 x0_1=1.6264e-05 x0_0_TC=-0.001 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.0713e-10 ags2=1.2151e-10 ags3=2.3682 ags4=0.17302
+ ags5=-8.1438e-12 ags6=-11.988 ags7=1.4192
+ agd1=6.5198e-15 agd2=4.0635e-12 agd3=-12.38 agd4=70.789
+ agd5=3.5093e-11 agd6=-8.3958 agd7=4.1664
+ agd8=7.5137e-13 agd9=-41.411 agd10=6.4114
+ asd1=8.5372e-11 asd2=1.5843e-10 asd3=-0.68269 asd4=25.115
+ asd5=9.8396e-11 asd6=-17.729 asd7=2.7426 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2037 gatein drainin sourcein
.param aWg=16 A1=0.5748 k2=2.35 k3=0.15 rpara=0.29409 rpara_s_factor=0.21
+ aITc=0.00288 arTc=-0.0072 k2Tc=0.0005 x0_0=1.4598 x0_1=4.6153e-06 x0_0_TC=-0.001 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.2057e-11 ags2=6.7586e-12 ags3=2.4044 ags4=0.18882
+ ags5=0.0 ags6=-13.267 ags7=4.0137
+ agd1=1.8845e-15 agd2=2.8234e-13 agd3=-4.5385 agd4=30.25
+ agd5=2.006e-12 agd6=-6.5869 agd7=3.9822
+ agd8=2.4327e-13 agd9=-21.866 agd10=2.5136
+ asd1=3.9406e-12 asd2=8.6789e-12 asd3=-22.408 asd4=5.4085
+ asd5=1.0323e-11 asd6=-0.10137 asd7=41.925 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2040 gatein drainin sourcein
.param aWg=187 A1=7.17 k2=2.4424 k3=0.15 rpara=0.015677 rpara_s_factor=0.39
+ aITc=0.0026 arTc=-0.0065 k2Tc=0.0005 x0_0=1.3003 x0_1=6.5198e-06 x0_0_TC=-0.001 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=6.5347e-11 ags2=4.5184e-11 ags3=1.9414 ags4=0.19404
+ ags5=-1.1259e-20 ags6=-0.17558 ags7=0.00071251
+ agd1=7.8286e-15 agd2=7.2093e-14 agd3=-9.0648 agd4=11.968
+ agd5=4.3959e-11 agd6=-2.7874 agd7=16.548
+ agd8=2.3891e-12 agd9=-2.3352 agd10=0.99929
+ asd1=2.9675e-11 asd2=1.4851e-11 asd3=-57.96 asd4=3.0244
+ asd5=6.7114e-12 asd6=-0.37155 asd7=5.7448 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2046 gatein drainin sourcein
.param aWg=375 A1=10.2614 k2=2.35 k3=0.155 rpara=0.0122 rpara_s_factor=0.23
+ aITc=0.0033 arTc=-0.0055 k2Tc=0.0009 x0_0=2 x0_1=-0.25 x0_0_TC=-0.004 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.8404e-10 ags2=2.3313e-10 ags3=1.644 ags4=0.15338
+ ags5=-2.8477e-11 ags6=-13.614 ags7=3.5031
+ agd1=1.5452e-15 agd2=2.1291e-12 agd3=-6.2067 agd4=112.58
+ agd5=3.9247e-11 agd6=-11.799 agd7=3.8645
+ agd8=3.9951e-13 agd9=-310.96 agd10=53.392
+ asd1=1.0425e-10 asd2=1.3127e-10 asd3=-0.56071 asd4=116.7
+ asd5=2.5041e-10 asd6=-23.414 asd7=3.1673 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2111Q1 gatein drainin sourcein
.param aWg=347 A1=12.957 k2=2.45 k3=0.15 rpara=0.0088361 rpara_s_factor=0.35
+ aITc=0.00279 arTc=-0.0062 k2Tc=0.0005 x0_0=1.4466 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.8184e-10 ags2=9.6007e-11 ags3=1.9184 ags4=0.18128
+ ags5=-1.6201e-14 ags6=-0.20809 ags7=0.082045
+ agd1=1.1395e-17 agd2=4.2476e-13 agd3=-0.26465 agd4=-0.38743
+ agd5=3.7405e-11 agd6=-5.1543 agd7=4.6342
+ agd8=3.3761e-12 agd9=-48.709 agd10=6.6988
+ asd1=1.3889e-16 asd2=1.1094e-10 asd3=-5.3181e-08 asd4=-15.404
+ asd5=1.5789e-10 asd6=-13.82 asd7=4.98 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2111Q2 gatein drainin sourcein
.param aWg=943 A1=35.2117 k2=2.45 k3=0.15 rpara=0.0042661 rpara_s_factor=0.35
+ aITc=0.00279 arTc=-0.0062 k2Tc=0.0005 x0_0=1.4466 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=4.6926e-10 ags2=2.5556e-10 ags3=2.0378 ags4=0.23128
+ ags5=-3.8873e-14 ags6=-0.27157 ags7=0.10509
+ agd1=9.4825e-18 agd2=3.1135e-13 agd3=-0.19616 agd4=-0.27075
+ agd5=9.9945e-11 agd6=-5.699 agd7=4.3676
+ agd8=9.4617e-12 agd9=-40.203 agd10=3.9509
+ asd1=1.0623e-16 asd2=2.8594e-10 asd3=-3.5106e-08 asd4=-18.231
+ asd5=1.0798e-10 asd6=-16.35 asd7=2.0276 asd8=5.3118e-19
+ asd9=9.5421e-06 asd10=5.5454e-06 asd11=8.1613e-10 asd12=-7.5952e-08
+ asd13=10.985 rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10))+
+ asd11*asd13*log(1+exp((v(source,drain)-asd12)/asd13)) )
.ends
*****************************************************************************
.subckt EPC2023 gatein drainin sourcein
.param aWg=3948 A1=134.38 k2=2.2 k3=0.15 rpara=0.000695 rpara_s_factor=0.34
+ aITc=0.00335 arTc=-0.0067 k2Tc=0.0005 x0_0=2 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.0543e-09 ags2=1.1102e-09 ags3=2.0347 ags4=0.19242
+ ags5=-1.0054e-14 ags6=-0.00076954 ags7=0.0022682
+ agd1=7.7879e-13 agd2=7.3349e-11 agd3=-0.099542 agd4=1.5186
+ agd5=3.8407e-10 agd6=-4.0811 agd7=4.3619
+ agd8=9.353e-11 agd9=-32.08 agd10=17.646
+ asd1=9.104e-10 asd2=1.31e-11 asd3=9.0331e-05 asd4=24.116
+ asd5=1.4248e-09 asd6=-11.266 asd7=6.7597 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2049 gatein drainin sourcein
.param aWg=1166 A1=31.138 k2=2.494 k3=0.15 rpara=0.0023144 rpara_s_factor=0.36
+ aITc=0.0036 arTc=-0.006 k2Tc=0.0008 x0_0=1.4227 x0_1=-0.1 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=6.5375e-10 ags2=4.0819e-10 ags3=2.034 ags4=0.18672
+ ags5=-2.5263e-14 ags6=-8.798 ags7=0.86861
+ agd1=7.0261e-15 agd2=1.5888e-11 agd3=-0.091177 agd4=49.447
+ agd5=8.8099e-11 agd6=-10.294 agd7=3.1008
+ agd8=2.3433e-12 agd9=-70.331 agd10=33.124
+ asd1=1.8639e-10 asd2=3.1035e-10 asd3=-15.602 asd4=1.9755
+ asd5=3.2984e-10 asd6=-0.76069 asd7=34.056 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2100Q1 gatein drainin sourcein
.param aWg=695 A1=21.63 k2=2.3 k3=0.15 rpara=0.0032189 rpara_s_factor=0.35
+ aITc=0.0027 arTc=-0.006 k2Tc=0.0005 x0_0=1.3861 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=3.8054e-10 ags2=2.048e-10 ags3=1.8156 ags4=0.20887
+ ags5=-8.6814e-15 ags6=-0.095533 ags7=0.083578
+ agd1=2.2624e-17 agd2=2.0005e-13 agd3=-0.22249 agd4=-0.19778
+ agd5=8.8247e-11 agd6=-4.6913 agd7=4.0366
+ agd8=7.891e-12 agd9=-45.102 agd10=8.3187
+ asd1=2.1667e-16 asd2=1.8994e-10 asd3=-6.0949e-08 asd4=-6.3132
+ asd5=3.2576e-10 asd6=-11.531 asd7=4.3201 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2100Q2 gatein drainin sourcein
.param aWg=2972 A1=89.326 k2=2.35 k3=0.15 rpara=0.0008458 rpara_s_factor=0.35
+ aITc=0.00325 arTc=-0.0065 k2Tc=0.0005 x0_0=1.9534 x0_1=-0.05 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.5701e-09 ags2=8.7589e-10 ags3=1.8446 ags4=0.2233
+ ags5=-6.5044e-14 ags6=-0.19982 ags7=0.20406
+ agd1=8.8557e-18 agd2=8.2268e-13 agd3=-0.096989 agd4=-0.10802
+ agd5=3.1923e-10 agd6=-6.53 agd7=3.914
+ agd8=3.0361e-11 agd9=-45.79 agd10=2.9103
+ asd1=1.6524e-16 asd2=7.5169e-10 asd3=-3.2119e-08 asd4=-16.43
+ asd5=3.2545e-10 asd6=-14.62 asd7=1.4791 asd8=1.4623e-19
+ asd9=1.493e-05 asd10=3.4708e-06 asd11=2.7025e-09 asd12=-2.8442e-08
+ asd13=12.483 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10))+
+ asd11*asd13*log(1+exp((v(source,drain)-asd12)/asd13)) )
.ends
*****************************************************************************
.subckt EPC2050 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=172000 A1={2.996e-02*aWg} k2=2.329e+00 k3=9.000e-02 rpara=4.816e-02
+ rpara_s_factor=1.049e-01 aITc=5.600e-03 arTc=-7.028e-03 k2Tc=7.091e-04
+ x0_0=4.103e+00 x0_0_TC=-3.906e-03 x0_1=-9.802e-02 x0_1_TC=-6.449e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={2.340e-12*si} ags2={9.400e-13*si} ags3=1.766e+00 ags4=1.429e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.940e-15*sr} agd2={8.190e-14*sr} agd3=-7.778e+00 agd4=1.558e+00
+ agd5={1.360e-14*sr} agd6=-3.308e+01 agd7=1.720e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.640e-13*so} asd2={1.090e-12*so} asd3=-1.035e+01 asd4=7.580e-01
+ asd5={7.000e-13*so} asd6=-1.000e+01 asd7=6.750e+01 asd8={2.250e-13*so}
+ asd9=-4.000e+01 asd10=2.000e+00 asd11={1.500e-13*so} asd12=-2.850e+02 asd13=1.500e+01
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10))+
+ asd11*asd13*log(1+exp((v(source,drain)-asd12)/asd13)))
.ends
*****************************************************************************
.subckt EPC2202 gatein drainin sourcein
.param aWg=507 A1=17.877 k2=2.2024 k3=0.15 rpara=0.008853 rpara_s_factor=0.21
+ aITc=0.00375 arTc=-0.0075 k2Tc=0.0008 x0_0=1.6995 x0_1=-0.1 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=3.4239e-10 ags2=2.0938e-10 ags3=1.8059 ags4=0.25064
+ ags5=-2.6047e-11 ags6=11.202 ags7=1.8528
+ agd1=4.7558e-15 agd2=6.4292e-12 agd3=-5.2678 agd4=40.08
+ agd5=3.9737e-11 agd6=-9.32 agd7=2.5904
+ agd8=6.3699e-13 agd9=-378.31 agd10=12.968
+ asd1=1.8403e-10 asd2=2.5689e-10 asd3=-0.72744 asd4=30.436
+ asd5=2.4879e-10 asd6=-15.104 asd7=1.5647 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2203 gatein drainin sourcein
.param aWg=115 A1=3.7225 k2=2.4725 k3=0.15 rpara=0.045856 rpara_s_factor=0.23
+ aITc=0.00414 arTc=-0.0069 k2Tc=0.0008 x0_0=1.5764 x0_1=-0.1 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.1874e-11 ags2=4.3702e-11 ags3=1.8083 ags4=0.23132
+ ags5=-2.2481e-11 ags6=10.762 ags7=1.2289
+ agd1=3.9208e-15 agd2=1.4276e-12 agd3=-3.7081 agd4=34.585
+ agd5=8.7701e-12 agd6=-9.4657 agd7=2.5229
+ agd8=2.0154e-13 agd9=-353.48 agd10=15.057
+ asd1=3.9053e-11 asd2=5.3294e-11 asd3=-0.6675 asd4=26.865
+ asd5=4.8374e-11 asd6=-15.156 asd7=1.4717 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2045 gatein drainin sourcein
.param aWg=866 A1=25.796 k2=2.1857 k3=0.15 rpara=0.00346 rpara_s_factor=0.27
+ aITc=0.00378 arTc=-0.0063 k2Tc=0.00072 x0_0=1.4767 x0_1=-0.1 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=7.3481e-10 ags2=3.6154e-10 ags3=1.6548 ags4=0.202
+ ags5=-5.4798e-11 ags6=-5.781 ags7=2.5926
+ agd1=5.9447e-15 agd2=6.8716e-12 agd3=-3.3788 agd4=19.371
+ agd5=9.9266e-11 agd6=-4.9772 agd7=3.9978
+ agd8=1.7713e-12 agd9=-323.67 agd10=4.1292
+ asd1=2.7105e-10 asd2=7.8978e-10 asd3=-0.45489 asd4=13.964
+ asd5=2.2552e-10 asd6=-13.999 asd7=1.25 rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2051 gatein drainin sourcein
.param aWg=253 A1=7.5362 k2=2.1857 k3=0.15 rpara=0.012738 rpara_s_factor=0.27
+ aITc=0.00378 arTc=-0.0063 k2Tc=0.00072 x0_0=1.4767 x0_1=-0.1 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=2.1467e-10 ags2=1.0562e-10 ags3=1.6548 ags4=0.202
+ ags5=-1.6009e-11 ags6=-5.781 ags7=2.5926
+ agd1=1.7367e-15 agd2=2.0075e-12 agd3=-3.3788 agd4=19.371
+ agd5=2.9e-11 agd6=-4.9772 agd7=3.9978
+ agd8=5.1748e-13 agd9=-323.67 agd10=4.1292
+ asd1=7.9187e-11 asd2=2.3073e-10 asd3=-0.45489 asd4=13.964
+ asd5=6.5885e-11 asd6=-13.999 asd7=1.25 rg_value=0.8
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2206 gatein drainin sourcein
.param aWg=2599 A1=69.399 k2=2.0725 k3=0.15 rpara=0.001044 rpara_s_factor=0.24
+ aITc=0.00395 arTc=-0.0079 k2Tc=0.0008 x0_0=1.5157 x0_1=-0.1 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=1.5971e-09 ags2=8.869e-10 ags3=1.5057 ags4=0.30062
+ ags5=-9.4581e-11 ags6=-12.497 ags7=2.6202
+ agd1=6.4329e-15 agd2=3.6256e-11 agd3=-5.0335 agd4=38.655
+ agd5=2.2157e-10 agd6=-9.6404 agd7=3.7424
+ agd8=4.4083e-12 agd9=-223.17 agd10=5.0661
+ asd1=6.7066e-10 asd2=1.3833e-09 asd3=-0.38247 asd4=47.537
+ asd5=1.1034e-09 asd6=-17.887 asd7=2.4197 rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2212 gatein drainin sourcein
.param aWg=507 A1=15.438 k2=1.8687 k3=0.15 rpara=0.006771 rpara_s_factor=0.21
+ aITc=0.004 arTc=-0.008 k2Tc=0.0008 x0_0=1.4657 x0_1=-0.1 x0_0_TC=-0.0025 x0_1_TC=0
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1=3.3565e-10 ags2=1.8529e-10 ags3=1.4202 ags4=0.24025
+ ags5=-2.8626e-11 ags6=8.775 ags7=2.3616
+ agd1=5.5248e-15 agd2=7.5016e-12 agd3=-5.6168 agd4=39.134
+ agd5=4.1642e-11 agd6=-9.9839 agd7=3.5643
+ agd8=8.052e-13 agd9=-393.8 agd10=12.564
+ asd1=1.6619e-10 asd2=3.0262e-10 asd3=-0.70556 asd4=40.38
+ asd5=2.064e-10 asd6=-17.42 asd7=1.793 rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source)) ),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain)) ) )
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))) )
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)) )
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7)) )
.ends
*****************************************************************************
.subckt EPC2053 gatein drainin sourcein
.param si=1.230e+00 so=6.396e+00 sr=1.640e+03
.param aWg=1640 A1={4.856e-02*aWg} k2=2.234e+00 k3=9.000e-02 rpara=2.661e-03
+ rpara_s_factor=2.700e-01 aITc=4.000e-03 arTc=-6.000e-03 k2Tc=5.000e-04
+ x0_0=4.031e+00 x0_0_TC=-1.000e-03 x0_1=4.070e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.274e-09*si} ags2={5.218e-10*si} ags3=1.691e+00 ags4=3.443e-01
+ ags5={-6.418e-11*si} ags6=-1.055e+01 ags7=2.743e+00
+ agd1={6.350e-15*sr} agd2={-6.810e-15*sr} agd3=-1.836e+01 agd4=1.756e+00
+ agd5={9.238e-14*sr} agd6=-6.892e+00 agd7=4.638e+00 agd8={1.205e-15*sr}
+ agd9=-3.598e+01 agd10=2.158e+00
+ asd1={7.655e-11*so} asd2={5.144e-11*so} asd3=-1.294e+01 asd4=1.403e+00
+ asd5={1.322e-08*so} asd6=8.952e+01 asd7=1.797e+01 asd8={1.669e-11*so}
+ asd9=-1.782e+00 asd10=-1.264e+00
+ rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2214 gatein drainin sourcein
.param si=2.054e-01 so=1.517e+00 sr=3.160e+02
.param aWg=316 A1={3.147e-02*aWg} k2=2.083e+00 k3=9.000e-02 rpara=1.167e-02
+ rpara_s_factor=2.400e-01 aITc=4.000e-03 arTc=-6.400e-03 k2Tc=6.000e-04
+ x0_0=2.736e+00 x0_0_TC=-1.000e-03 x0_1=1.364e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={8.744e-10*si} ags2={5.303e-10*si} ags3=1.606e+00 ags4=2.760e-01
+ ags5={8.269e-11*si} ags6=-1.321e+01 ags7=-3.801e+00
+ agd1={3.397e-15*sr} agd2={-7.360e-12*sr} agd3=-2.703e+01 agd4=5.973e+00
+ agd5={3.069e-13*sr} agd6=-1.755e+01 agd7=8.471e+00 agd8={7.164e-12*sr}
+ agd9=-2.712e+01 agd10=5.941e+00
+ asd1={4.392e-10*so} asd2={7.925e-11*so} asd3=-1.844e+01 asd4=2.396e+00
+ asd5={-3.743e-10*so} asd6=-2.110e+01 asd7=-1.795e+01 asd8={-2.922e-10*so}
+ asd9=-2.353e+01 asd10=1.620e+01
+ rg_value=0.7
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2056 gatein drainin sourcein
.param si=6.740e-01 so=4.044e+00 sr=7.930e+02
.param aWg=793 A1={4.101e-02*aWg} k2=1.737e+00 k3=9.000e-02 rpara=5.113e-03
+ rpara_s_factor=2.200e-01 aITc=3.500e-03 arTc=-5.900e-03 k2Tc=6.000e-04
+ x0_0=4.664e+00 x0_0_TC=-1.000e-03 x0_1=6.962e-02 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.201e-09*si} ags2={6.038e-10*si} ags3=1.373e+00 ags4=2.214e-01
+ ags5={-9.749e-11*si} ags6=-9.077e+00 ags7=4.349e+00
+ agd1={5.548e-12*sr} agd2={-1.179e-11*sr} agd3=-1.503e+04 agd4=-1.255e+05
+ agd5={-7.023e-12*sr} agd6=-1.546e+01 agd7=4.910e+00 agd8={7.126e-12*sr}
+ agd9=-1.535e+01 agd10=4.942e+00
+ asd1={1.185e-10*so} asd2={5.482e-11*so} asd3=-1.374e+01 asd4=1.065e+00
+ asd5={6.292e-11*so} asd6=-1.446e+01 asd7=6.838e+00 asd8={-6.009e-11*so}
+ asd9=-6.315e+01 asd10=-3.376e+01
+ rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2052 gatein drainin sourcein
.param si=3.735e-01 so=1.942e+00 sr=4.980e+02
.param aWg=498 A1={4.856e-02*aWg} k2=2.234e+00 k3=9.000e-02 rpara=8.507e-03
+ rpara_s_factor=2.700e-01 aITc=4.000e-03 arTc=-6.000e-03 k2Tc=5.000e-04
+ x0_0=4.031e+00 x0_0_TC=-1.000e-03 x0_1=4.070e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.159e-09*si} ags2={5.347e-10*si} ags3=1.652e+00 ags4=1.736e-01
+ ags5={-1.229e-10*si} ags6=-4.954e+00 ags7=5.240e+00
+ agd1={9.304e-15*sr} agd2={4.571e-13*sr} agd3=1.107e+01 agd4=6.927e+00
+ agd5={1.554e-14*sr} agd6=-1.010e+01 agd7=1.318e+00 agd8={-6.839e-15*sr}
+ agd9=8.161e-10 agd10=-1.409e-01
+ asd1={7.420e-11*so} asd2={1.112e-10*so} asd3=-1.679e+01 asd4=6.946e+00
+ asd5={4.849e-11*so} asd6=-1.237e+01 asd7=1.291e+00 asd8={8.281e-12*so}
+ asd9=-7.423e+01 asd10=8.449e+00
+ rg_value=0.7
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2708 gatein drainin sourcein
.param si=4.438e-01 so=2.308e+00 sr=5.918e+02
.param aWg=592 A1={4.378e-02*aWg} k2=1.883e+00 k3=9.000e-02 rpara=7.122e-03
+ rpara_s_factor=2.700e-01 aITc=3.500e-03 arTc=-5.900e-03 k2Tc=6.000e-04
+ x0_0=7.387e+00 x0_0_TC=-1.000e-03 x0_1=-3.769e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.216e-09*si} ags2={5.305e-10*si} ags3=1.546e+00 ags4=1.517e-01
+ ags5={-4.536e-10*si} ags6=7.401e+00 ags7=5.922e+00
+ agd1={7.868e-15*sr} agd2={6.608e-13*sr} agd3=1.005e+01 agd4=5.327e+00
+ agd5={8.269e-15*sr} agd6=-9.872e+00 agd7=7.579e-01 agd8={-4.792e-15*sr}
+ agd9=8.161e-10 agd10=-1.409e-01
+ asd1={7.797e-11*so} asd2={1.179e-10*so} asd3=-1.119e+01 asd4=6.609e+00
+ asd5={5.673e-11*so} asd6=-1.106e+01 asd7=9.497e-01 asd8={6.331e-12*so}
+ asd9=-7.824e+01 asd10=8.567e+00
+ rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2034C gatein drainin sourcein
.param si=1.281e+00 so=1.089e+01 sr=1.423e+03
.param aWg=1423 A1={2.850e-02*aWg} k2=1.962e+00 k3=9.000e-02 rpara=5.232e-03
+ rpara_s_factor=1.500e-01 aITc=4.000e-03 arTc=-6.900e-03 k2Tc=6.000e-04
+ x0_0=4.832e+00 x0_0_TC=-1.000e-03 x0_1=-3.638e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={8.991e-10*si} ags2={6.678e-10*si} ags3=1.561e+00 ags4=2.729e-01
+ ags5={-7.601e-11*si} ags6=-1.662e+01 ags7=4.170e+00
+ agd1={7.265e-16*sr} agd2={8.490e-15*sr} agd3=-2.408e+01 agd4=4.730e+01
+ agd5={2.464e-14*sr} agd6=-1.817e+01 agd7=1.301e+00 agd8={6.554e-14*sr}
+ agd9=-9.938e+00 agd10=3.262e+00
+ asd1={6.429e-11*so} asd2={7.884e-11*so} asd3=-2.034e+01 asd4=1.602e+00
+ asd5={5.058e-11*so} asd6=-7.564e+00 asd7=1.909e+01 asd8={-2.469e-11*so}
+ asd9=-1.335e+02 asd10=-2.966e+01
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2216 gatein drainin sourcein
.param si=1.122e-01 so=5.517e-01 sr=1.870e+02
.param aWg=187 A1={6.636e-02*aWg} k2=1.983e+00 k3=9.000e-02 rpara=1.752e-02
+ rpara_s_factor=3.671e-01 aITc=3.500e-03 arTc=-6.200e-03 k2Tc=6.800e-04
+ x0_0=5.112e+00 x0_0_TC=-1.000e-03 x0_1=5.175e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={6.684e-10*si} ags2={3.922e-10*si} ags3=1.708e+00 ags4=2.000e-01
+ ags5={0.000e+00*si} ags6=0.000e+00 ags7=1.000e+01
+ agd1={5.348e-15*sr} agd2={2.144e-13*sr} agd3=1.000e-01 agd4=2.000e+01
+ agd5={6.310e-14*sr} agd6=5.000e+00 agd7=1.000e+01 agd8={5.390e-14*sr}
+ agd9=1.280e+00 agd10=1.500e+00
+ asd1={7.287e-11*so} asd2={3.064e-11*so} asd3=1.000e-01 asd4=2.000e+01
+ asd5={2.719e-12*so} asd6=-5.000e-02 asd7=2.500e-01 asd8={0.000e+00*so}
+ asd9=1.000e+00 asd10=1.000e+00
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2215 gatein drainin sourcein
.param si={aWg*1.200e-03} so={aWg*6.150e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=1080000 A1={3.625e-02*aWg} k2=1.874e+00 k3=9.000e-02 rpara=5.209e-03
+ rpara_s_factor=2.406e-01 aITc=3.000e-03 arTc=-6.700e-03 k2Tc=6.000e-04
+ x0_0=4.938e+00 x0_0_TC=-2.000e-03 x0_1=-1.285e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.045e-09*si} ags2={8.283e-10*si} ags3=1.376e+00 ags4=1.808e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.124e-15*sr} agd2={1.409e-13*sr} agd3=-6.900e+00 agd4=5.314e+00
+ agd5={2.769e-14*sr} agd6=-2.326e+01 agd7=2.129e+01 agd8={1.081e-15*sr}
+ agd9=-4.326e+01 agd10=1.029e+01
+ asd1={5.053e-11*so} asd2={3.977e-11*so} asd3=-1.941e+01 asd4=2.356e+00
+ asd5={1.449e-11*so} asd6=-8.476e+01 asd7=1.007e+01 asd8={8.934e-11*so}
+ asd9=-3.023e+01 asd10=2.523e+01
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2207 gatein drainin sourcein
.param si={aWg*1.200e-03} so={aWg*6.150e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=362000 A1={3.625e-02*aWg} k2=1.874e+00 k3=9.000e-02 rpara=1.243e-02
+ rpara_s_factor=2.406e-01 aITc=3.000e-03 arTc=-6.700e-03 k2Tc=6.000e-04
+ x0_0=4.938e+00 x0_0_TC=-2.000e-03 x0_1=-1.285e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.045e-09*si} ags2={8.283e-10*si} ags3=1.376e+00 ags4=1.808e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.124e-15*sr} agd2={1.409e-13*sr} agd3=-6.900e+00 agd4=5.314e+00
+ agd5={2.769e-14*sr} agd6=-2.326e+01 agd7=2.129e+01 agd8={1.081e-15*sr}
+ agd9=-4.326e+01 agd10=1.029e+01
+ asd1={5.053e-11*so} asd2={3.977e-11*so} asd3=-1.941e+01 asd4=2.356e+00
+ asd5={1.449e-11*so} asd6=-8.476e+01 asd7=1.007e+01 asd8={8.934e-11*so}
+ asd9=-3.023e+01 asd10=2.523e+01
+ rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2218 gatein drainin sourcein
.param si={aWg*7.500e-04} so={aWg*3.900e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=1545000 A1={4.555e-02*aWg} k2=1.824e+00 k3=9.000e-02 rpara=1.975e-03
+ rpara_s_factor=3.229e-01 aITc=3.000e-03 arTc=-7.500e-03 k2Tc=6.000e-04
+ x0_0=6.137e+00 x0_0_TC=-2.000e-03 x0_1=-2.623e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.023e-09*si} ags2={5.465e-10*si} ags3=1.604e+00 ags4=1.861e-01
+ ags5={1.732e-10*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.942e-15*sr} agd2={1.178e-13*sr} agd3=-5.000e+00 agd4=4.314e+00
+ agd5={7.786e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={1.742e-15*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={8.330e-11*so} asd2={4.297e-11*so} asd3=-1.435e+01 asd4=1.287e+00
+ asd5={1.155e-10*so} asd6=-2.014e+01 asd7=9.467e+00 asd8={4.647e-12*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2218A gatein drainin sourcein
.param si={aWg*7.500e-04} so={aWg*3.900e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=1545000 A1={4.555e-02*aWg} k2=1.824e+00 k3=9.000e-02 rpara=1.975e-03
+ rpara_s_factor=3.229e-01 aITc=3.000e-03 arTc=-7.500e-03 k2Tc=6.000e-04
+ x0_0=6.137e+00 x0_0_TC=-2.000e-03 x0_1=-2.623e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.023e-09*si} ags2={5.465e-10*si} ags3=1.604e+00 ags4=1.861e-01
+ ags5={1.732e-10*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.942e-15*sr} agd2={1.178e-13*sr} agd3=-5.000e+00 agd4=4.314e+00
+ agd5={7.786e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={1.742e-15*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={8.330e-11*so} asd2={4.297e-11*so} asd3=-1.435e+01 asd4=1.287e+00
+ asd5={1.155e-10*so} asd6=-2.014e+01 asd7=9.467e+00 asd8={4.647e-12*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=0.45
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2204 gatein drainin sourcein
.param si={aWg*7.500e-04} so={aWg*3.900e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=837000 A1={4.555e-02*aWg} k2=1.824e+00 k3=9.000e-02 rpara=3.606e-03
+ rpara_s_factor=3.229e-01 aITc=3.000e-03 arTc=-7.500e-03 k2Tc=6.000e-04
+ x0_0=6.137e+00 x0_0_TC=-2.000e-03 x0_1=-2.623e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.023e-09*si} ags2={5.465e-10*si} ags3=1.604e+00 ags4=1.861e-01
+ ags5={1.732e-10*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.942e-15*sr} agd2={1.178e-13*sr} agd3=-5.000e+00 agd4=4.314e+00
+ agd5={7.786e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={1.742e-15*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={8.330e-11*so} asd2={4.297e-11*so} asd3=-1.435e+01 asd4=1.287e+00
+ asd5={1.155e-10*so} asd6=-2.014e+01 asd7=9.467e+00 asd8={4.647e-12*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2059 gatein drainin sourcein
.param si={aWg*8.500e-04} so={aWg*5.100e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=681000 A1={3.853e-02*aWg} k2=1.759e+00 k3=9.000e-02 rpara=5.684e-03
+ rpara_s_factor=3.086e-01 aITc=3.000e-03 arTc=-6.500e-03 k2Tc=6.000e-04
+ x0_0=4.270e+00 x0_0_TC=-4.000e-03 x0_1=1.595e-02 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.092e-09*si} ags2={5.570e-10*si} ags3=1.447e+00 ags4=1.829e-01
+ ags5={6.219e-10*si} ags6=2.590e-01 ags7=3.393e-03
+ agd1={1.411e-15*sr} agd2={8.924e-14*sr} agd3=-6.560e+00 agd4=2.786e+00
+ agd5={2.351e-14*sr} agd6=-1.126e+01 agd7=2.316e+01 agd8={1.446e-14*sr}
+ agd9=-1.614e+01 agd10=1.229e+00
+ asd1={6.144e-11*so} asd2={6.441e-11*so} asd3=-4.747e+01 asd4=3.175e+01
+ asd5={5.062e-11*so} asd6=-1.686e+01 asd7=1.479e+00 asd8={5.073e-11*so}
+ asd9=-1.532e+01 asd10=8.691e+00
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2055 gatein drainin sourcein
.param si={aWg*6.500e-04} so={aWg*3.000e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=1079000 A1={2.607e-02*aWg} k2=2.095e+00 k3=9.000e-02 rpara=1.844e-03
+ rpara_s_factor=3.291e-01 aITc=3.000e-03 arTc=-7.000e-03 k2Tc=6.000e-04
+ x0_0=4.732e+00 x0_0_TC=-3.000e-03 x0_1=-4.118e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.187e-09*si} ags2={4.600e-10*si} ags3=1.730e+00 ags4=2.766e-01
+ ags5={0.000e+00*si} ags6=-4.571e+01 ags7=1.657e+00
+ agd1={1.854e-15*sr} agd2={9.339e-14*sr} agd3=-1.360e+00 agd4=2.986e+00
+ agd5={1.668e-14*sr} agd6=-5.260e+00 agd7=2.616e+01 agd8={2.396e-14*sr}
+ agd9=-1.154e+01 agd10=1.429e+00
+ asd1={9.734e-11*so} asd2={9.710e-11*so} asd3=-7.496e+00 asd4=1.233e+01
+ asd5={3.763e-11*so} asd6=-1.401e+01 asd7=8.496e-01 asd8={4.693e-11*so}
+ asd9=-1.147e+01 asd10=1.684e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2219 gatein drainin sourcein
.param si={aWg*6.500e-04} so={aWg*5.600e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=3200 A1={4.556e-02*aWg} k2=2.708e+00 k3=9.000e-02 rpara=1.410e+00
+ rpara_s_factor=1.599e-01 aITc=3.000e-03 arTc=-7.000e-03 k2Tc=6.000e-04
+ x0_0=4.747e+00 x0_0_TC=-4.000e-03 x0_1=3.036e-02 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ dgs5=2.5e-3 dgs6=-1.985 dgs7=8e-2
+ ags1={3.766e-09*si} ags2={6.591e-10*si} ags3=2.249e+00 ags4=1.492e-01
+ ags5={9.979e-12*si} ags6=-2.178e+00 ags7=2.626e-02
+ agd1={1.698e-15*sr} agd2={2.067e-14*sr} agd3=-4.730e-01 agd4=1.173e+00
+ agd5={1.768e-13*sr} agd6=-3.962e+00 agd7=5.392e+00 agd8={3.644e-15*sr}
+ agd9=-2.526e+01 agd10=2.932e+01
+ asd1={1.118e-10*so} asd2={1.190e-10*so} asd3=2.000e-01 asd4=1.839e+01
+ asd5={8.143e-11*so} asd6=-1.722e+01 asd7=1.362e+00 asd8={0.000e+00*so}
+ asd9=1.000e+00 asd10=1.000e+00
+ rg_value=4.8
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>0,
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))),
+ (-dgs5*log(1+exp((-v(gate,source)+dgs6)/dgs7))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2065 gatein drainin sourcein
.param si={aWg*7.500e-04} so={aWg*4.100e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=1435000 A1={2.360e-02*aWg} k2=1.987e+00 k3=9.000e-02 rpara=1.796e-03
+ rpara_s_factor=2.503e-01 aITc=3.000e-03 arTc=-1.000e-02 k2Tc=6.000e-04
+ x0_0=6.199e+00 x0_0_TC=-3.000e-03 x0_1=-9.127e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={9.813e-10*si} ags2={3.797e-10*si} ags3=1.871e+00 ags4=3.403e-01
+ ags5={3.340e-12*si} ags6=-5.234e+00 ags7=2.619e+01
+ agd1={2.156e-15*sr} agd2={1.073e-13*sr} agd3=-3.024e+00 agd4=4.061e+00
+ agd5={1.362e-14*sr} agd6=-1.188e+01 agd7=3.001e+01 agd8={2.773e-14*sr}
+ agd9=-1.400e+01 agd10=1.326e+00
+ asd1={6.095e-11*so} asd2={8.613e-11*so} asd3=-1.587e+01 asd4=1.874e+00
+ asd5={4.307e-12*so} asd6=-2.956e+01 asd7=3.963e+00 asd8={5.492e-11*so}
+ asd9=-3.554e+01 asd10=3.338e+01
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2054 gatein drainin sourcein
.param si={aWg*1.200e-03} so={aWg*6.150e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=217000 A1={3.303e-02*aWg} k2=2.202e+00 k3=9.000e-02 rpara=2.722e-02
+ rpara_s_factor=1.849e-01 aITc=3.000e-03 arTc=-6.900e-03 k2Tc=6.000e-04
+ x0_0=3.552e+00 x0_0_TC=-3.000e-03 x0_1=1.717e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.377e-09*si} ags2={7.097e-10*si} ags3=1.632e+00 ags4=2.441e-01
+ ags5={-0.000e+00*si} ags6=0.000e+00 ags7=1.000e+00
+ agd1={9.207e-16*sr} agd2={9.399e-14*sr} agd3=-8.379e+00 agd4=2.391e+00
+ agd5={1.848e-14*sr} agd6=-2.326e+01 agd7=2.129e+01 agd8={1.803e-15*sr}
+ agd9=-4.326e+01 agd10=8.575e+00
+ asd1={6.039e-11*so} asd2={8.190e-11*so} asd3=-1.266e+01 asd4=8.656e-01
+ asd5={1.036e-11*so} asd6=-8.023e+01 asd7=5.615e+00 asd8={1.017e-10*so}
+ asd9=-2.386e+01 asd10=2.773e+01
+ rg_value=0.8
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2069 gatein drainin sourcein
.param si={aWg*6.000e-04} so={aWg*3.350e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=2818000 A1={1.145e-02*aWg} k2=2.300e+00 k3=9.000e-02 rpara=5.526e-04
+ rpara_s_factor=2.778e-01 aITc=3.000e-03 arTc=-8.360e-03 k2Tc=7.000e-04
+ x0_0=5.349e+00 x0_0_TC=-1.000e-03 x0_1=-9.948e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={7.800e-10*si} ags2={3.660e-10*si} ags3=2.048e+00 ags4=2.070e-01
+ ags5={1.000e-12*si} ags6=1.000e+00 ags7=1.000e+00
+ agd1={6.520e-15*sr} agd2={1.090e-13*sr} agd3=-3.024e+00 agd4=4.061e+00
+ agd5={7.140e-15*sr} agd6=-1.188e+01 agd7=3.001e+01 agd8={1.450e-14*sr}
+ agd9=-1.400e+01 agd10=1.326e+00
+ asd1={8.360e-10*so} asd2={6.830e-11*so} asd3=-1.462e+01 asd4=2.047e+00
+ asd5={-9.500e-10*so} asd6=2.141e+02 asd7=-1.919e+02 asd8={1.530e-12*so}
+ asd9=-3.720e+01 asd10=-1.624e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2067 gatein drainin sourcein
.param si={aWg*6.500e-04} so={aWg*3.100e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=2730000 A1={2.672e-02*aWg} k2=2.115e+00 k3=9.000e-02 rpara=8.300e-04
+ rpara_s_factor=3.251e-01 aITc=3.000e-03 arTc=-6.860e-03 k2Tc=8.000e-04
+ x0_0=4.444e+00 x0_0_TC=-1.000e-03 x0_1=-3.190e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.214e-09*si} ags2={4.750e-10*si} ags3=1.565e+00 ags4=2.713e-01
+ ags5={5.635e-14*si} ags6=1.000e+00 ags7=1.000e+00
+ agd1={3.701e-15*sr} agd2={1.130e-13*sr} agd3=-3.024e+00 agd4=4.061e+00
+ agd5={7.370e-15*sr} agd6=-1.188e+01 agd7=3.001e+01 agd8={1.000e-14*sr}
+ agd9=-1.000e+01 agd10=1.026e+00
+ asd1={9.612e-11*so} asd2={6.998e-11*so} asd3=-1.461e+01 asd4=1.182e+00
+ asd5={3.083e-11*so} asd6=-1.012e+01 asd7=1.517e+00 asd8={8.518e-11*so}
+ asd9=-1.124e+01 asd10=1.132e+01
+ rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2070 gatein drainin sourcein
.param si={aWg*7.500e-04} so={aWg*3.900e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=228000 A1={5.576e-02*aWg} k2=2.204e+00 k3=9.000e-02 rpara=1.523e-02
+ rpara_s_factor=3.545e-01 aITc=3.000e-03 arTc=-7.860e-03 k2Tc=6.500e-04
+ x0_0=3.920e+00 x0_0_TC=-1.000e-03 x0_1=4.337e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.501e-09*si} ags2={5.754e-10*si} ags3=1.798e+00 ags4=2.157e-01
+ ags5={1.731e-12*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.404e-15*sr} agd2={1.040e-13*sr} agd3=-4.952e+00 agd4=2.858e+00
+ agd5={8.697e-16*sr} agd6=-6.555e+01 agd7=1.095e+01 agd8={6.539e-15*sr}
+ agd9=-2.699e+01 agd10=4.366e+00
+ asd1={8.159e-11*so} asd2={1.370e-10*so} asd3=-1.040e+01 asd4=1.287e+00
+ asd5={5.583e-11*so} asd6=-2.808e+01 asd7=2.960e+00 asd8={1.161e-11*so}
+ asd9=-8.125e+01 asd10=1.416e+01
+ rg_value=1.0
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC7014 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=27000 A1={4.719e-02*aWg} k2=2.333e+00 k3=9.000e-02 rpara=2.118e-01
+ rpara_s_factor=2.151e-01 aITc=4.619e-03 arTc=-7.040e-03 k2Tc=8.930e-4
+ x0_0=2.880e+00 x0_0_TC=-6.780e-03 x0_1=4.165e-01 x0_1_TC=1.828e-2
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={5.41e-13*si} ags2={3.200e-13*si} ags3=2.344e+00 ags4=2.630e-01
+ ags5={0.000e-00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.940e-15*sr} agd2={1.180e-13*sr} agd3=-5.000e+00 agd4=4.314e+00
+ agd5={7.790e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={0.000e-00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={2.200e-13*so} asd2={4.710e-13*so} asd3=-1.335e+01 asd4=1.448e+00
+ asd5={8.450e-13*so} asd6=-3.014e+01 asd7=4.792e+01 asd8={0.000e-00*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=12.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2302 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=2720000 A1={1.698e-02*aWg} k2=2.138e+00 k3=9.000e-02 rpara=6.4000e-04
+ rpara_s_factor=2.759e-01 aITc=3.6390e-03 arTc=-9.1547e-03 k2Tc=3.7300e-4
+ x0_0=2.269e+00 x0_0_TC=-1.6300e-03 x0_1=-2.000e-12 x0_1_TC=-8.5200e-7
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.188e-12*si} ags2={4.370e-13*si} ags3=1.899e+00 ags4=2.039e-01
+ ags5={0.000e-00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.940e-15*sr} agd2={5.890e-14*sr} agd3=-7.500e+00 agd4=2.157e+00
+ agd5={7.790e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={0.000e-00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.599e-13*so} asd2={6.070e-13*so} asd3=-1.035e+01 asd4=1.086e+00
+ asd5={2.540e-13*so} asd6=-2.500e+01 asd7=5.616e+00 asd8={0.000e-00*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2221Q1 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=135000 A1={3.492e-02*aWg} k2=2.141e+00 k3=9.000e-02 rpara=3.283e-02
+ rpara_s_factor=1.832e-01 aITc=5.106e-03 arTc=-6.269e-03 k2Tc=5.480e-04
+ x0_0=3.301e+00 x0_0_TC=-9.624e-04 x0_1=1.229e-01 x0_1_TC=3.183e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={6.290e-13*si} ags2={3.760e-13*si} ags3=1.860e+00 ags4=2.028e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={4.380e-15*sr} agd2={1.040e-13*sr} agd3=-9.470e+00 agd4=4.000e+00
+ agd5={2.790e-15*sr} agd6=-7.463e+01 agd7=1.172e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.690e-13*so} asd2={3.930e-13*so} asd3=-1.735e+01 asd4=1.810e+00
+ asd5={4.220e-13*so} asd6=-5.140e+00 asd7=3.328e+01 asd8={0.000e+00*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=1.0
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2221Q2 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=135000 A1={3.492e-02*aWg} k2=2.141e+00 k3=9.000e-02 rpara=3.283e-02
+ rpara_s_factor=1.832e-01 aITc=5.106e-03 arTc=-6.269e-03 k2Tc=5.480e-04
+ x0_0=3.301e+00 x0_0_TC=-9.624e-04 x0_1=1.229e-01 x0_1_TC=3.183e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={6.290e-13*si} ags2={3.760e-13*si} ags3=1.860e+00 ags4=2.028e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={4.380e-15*sr} agd2={1.040e-13*sr} agd3=-9.470e+00 agd4=4.000e+00
+ agd5={2.790e-15*sr} agd6=-7.463e+01 agd7=1.172e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.690e-13*so} asd2={3.930e-13*so} asd3=-1.735e+01 asd4=1.810e+00
+ asd5={4.220e-13*so} asd6=-5.140e+00 asd7=3.328e+01 asd8={0.000e+00*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=1.0
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2071 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=2335000 A1={1.914e-02*aWg} k2=1.984e+00 k3=9.000e-02 rpara=9.385e-04
+ rpara_s_factor=2.753e-01 aITc=3.863e-03 arTc=-8.906e-03 k2Tc=1.402e-03
+ x0_0=2.937e+00 x0_0_TC=-2.273e-03 x0_1=-1.000e-02 x0_1_TC=2.850e-17
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.098e-12*si} ags2={3.734e-13*si} ags3=2.226e+00 ags4=2.157e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.711e-15*sr} agd2={7.850e-14*sr} agd3=-5.833e+00 agd4=1.912e+00
+ agd5={5.902e-15*sr} agd6=-2.413e+01 agd7=9.676e+00 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.410e-13*so} asd2={4.750e-13*so} asd3=-9.350e+00 asd4=6.780e-01
+ asd5={8.090e-14*so} asd6=-1.810e+00 asd7=1.910e+00 asd8={3.760e-13*so}
+ asd9=-2.210e+01 asd10=1.200e+01
+ rg_value=0.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2066 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=4257000 A1={1.708e-02*aWg} k2=2.228e+00 k3=9.000e-02 rpara=3.050e-04
+ rpara_s_factor=3.224e-01 aITc=4.200e-03 arTc=-5.184e-03 k2Tc=8.456e-04
+ x0_0=3.321e+00 x0_0_TC=-5.242e-03 x0_1=-2.000e-01 x0_1_TC=-1.000e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={7.346e-13*si} ags2={3.054e-13*si} ags3=2.118e+00 ags4=2.319e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={3.641e-15*sr} agd2={1.374e-13*sr} agd3=-3.472e-01 agd4=4.414e+00
+ agd5={1.527e-14*sr} agd6=-1.348e+01 agd7=2.150e+00 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.249e-13*so} asd2={3.259e-13*so} asd3=-1.435e+01 asd4=1.899e+00
+ asd5={1.638e-13*so} asd6=-1.522e+01 asd7=6.350e+00 asd8={0.000e+00*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2088 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=1545000 A1={2.635e-02*aWg} k2=2.142e+00 k3=9.000e-02 rpara=1.554e-03
+ rpara_s_factor=3.251e-01 aITc=4.925e-03 arTc=-6.093e-03 k2Tc=6.383e-04
+ x0_0=2.848e+00 x0_0_TC=1.460e-03 x0_1=1.000e-03 x0_1_TC=2.997e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.080e-12*si} ags2={4.530e-13*si} ags3=2.056e+00 ags4=2.056e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={2.000e-15*sr} agd2={8.840e-14*sr} agd3=-6.513e+00 agd4=2.308e+00
+ agd5={6.010e-15*sr} agd6=-2.893e+01 agd7=2.658e+00 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.420e-13*so} asd2={3.940e-13*so} asd3=-1.135e+01 asd4=1.005e+00
+ asd5={7.040e-13*so} asd6=4.860e+00 asd7=1.598e+01 asd8={9.380e-14*so}
+ asd9=-27.5 asd10=1.062e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2305 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=2194000 A1={2.013e-02*aWg} k2=1.852e+00 k3=9.000e-02 rpara=1.495e-03
+ rpara_s_factor=2.759e-01 aITc=3.574e-03 arTc=-5.320e-03 k2Tc=5.509e-04
+ x0_0=2.926e+00 x0_0_TC=-1.849e-03 x0_1=-1.000e-01 x0_1_TC=-1.000e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.229e-12*si} ags2={5.314e-13*si} ags3=1.667e+00 ags4=1.484e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.926e-15*sr} agd2={8.963e-14*sr} agd3=-7.089e+00 agd4=2.894e+00
+ agd5={8.760e-15*sr} agd6=-3.816e+01 agd7=1.807e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.250e-13*so} asd2={4.394e-13*so} asd3=-1.135e+01 asd4=9.166e-01
+ asd5={3.844e-13*so} asd6=-1.514e+01 asd7=7.223e+00 asd8={1.500e-13*so}
+ asd9=-8.125e+01 asd10=1.181e+01
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2063 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=698000 A1={3.159e-02*aWg} k2=1.781e+00 k3=9.000e-02 rpara=5.640e-03
+ rpara_s_factor=2.759e-01 aITc=5.562e-03 arTc=-4.724e-03 k2Tc=1.078e-03
+ x0_0=3.811e+00 x0_0_TC=2.462e-03 x0_1=3.174e-02 x0_1_TC=-2.374e-12
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.485e-12*si} ags2={5.747e-13*si} ags3=1.546e+00 ags4=1.591e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.720e-15*sr} agd2={9.570e-14*sr} agd3=-7.000e+00 agd4=2.500e+00
+ agd5={1.030e-14*sr} agd6=-1.875e+01 agd7=2.566e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.400e-13*so} asd2={7.230e-13*so} asd3=-1.085e+01 asd4=9.714e-01
+ asd5={1.490e-13*so} asd6=-6.500e+01 asd7=8.750e+00 asd8={1.450e-13*so}
+ asd9=-2.722e+01 asd10=4.514e+00
+ rg_value=0.6
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2044 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=599000 A1={4.783e-02*aWg} k2=2.145e+00 k3=9.000e-02 rpara=5.807e-03
+ rpara_s_factor=3.300e-01 aITc=4.641e-03 arTc=-6.169e-03 k2Tc=4.813e-04
+ x0_0=3.390e+00 x0_0_TC=2.291e-03 x0_1=2.809e-01 x0_1_TC=-2.145e-15
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={7.580e-13*si} ags2={4.460e-13*si} ags3=1.700e+00 ags4=2.260e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={2.170e-15*sr} agd2={1.400e-13*sr} agd3=-4.431e+00 agd4=3.256e+00
+ agd5={4.930e-15*sr} agd6=-2.862e+01 agd7=3.389e+00 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={2.440e-13*so} asd2={4.390e-13*so} asd3=-1.235e+01 asd4=2.292e+00
+ asd5={1.350e-13*so} asd6=-2.739e+01 asd7=1.805e+00 asd8={1.500e-13*so}
+ asd9=-7.625e+01 asd10=2.658e+01
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC7003 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=280000 A1={4.313e-02*aWg} k2=2.234e+00 k3=9.000e-02 rpara=1.511e-02
+ rpara_s_factor=2.327e-01 aITc=5.600e-03 arTc=-6.918e-03 k2Tc=9.016e-04
+ x0_0=2.572e+00 x0_0_TC=-7.796e-03 x0_1=4.155e-01 x0_1_TC=1.939e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={6.874e-13*si} ags2={4.181e-13*si} ags3=1.979e+00 ags4=2.470e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={9.100e-17*sr} agd2={1.231e-13*sr} agd3=-7.439e+00 agd4=4.607e+00
+ agd5={3.443e-15*sr} agd6=-2.150e+01 agd7=1.531e+02 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={2.708e-13*so} asd2={4.096e-13*so} asd3=-1.465e+01 asd4=6.158e-01
+ asd5={6.580e-13*so} asd6=-9.776e+00 asd7=3.494e+01 asd8={0.000e+00*so}
+ asd9=-1.162e+02 asd10=4.426e-02
+ rg_value=1.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2308 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=1044000 A1={2.135e-02*aWg} k2=2.121e+00 k3=9.000e-02 rpara=3.001e-03
+ rpara_s_factor=2.759e-01 aITc=4.000e-03 arTc=-4.894e-03 k2Tc=5.000e-04
+ x0_0=2.370e+00 x0_0_TC=-1.246e-03 x0_1=3.834e-03 x0_1_TC=5.000e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.535e-12*si} ags2={6.281e-13*si} ags3=1.624e+00 ags4=1.566e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={2.408e-15*sr} agd2={1.120e-13*sr} agd3=-3.545e+00 agd4=3.376e+00
+ agd5={4.380e-15*sr} agd6=-4.876e+01 agd7=9.037e+00 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.250e-13*so} asd2={4.449e-13*so} asd3=-9.850e+00 asd4=1.103e+00
+ asd5={1.247e-12*so} asd6=1.236e+01 asd7=1.837e+01 asd8={9.888e-14*so}
+ asd9=-6.875e+01 asd10=7.475e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2306 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=1312000 A1={2.746e-02*aWg} k2=2.073e+00 k3=9.000e-02 rpara=2.059e-03
+ rpara_s_factor=2.759e-01 aITc=3.982e-03 arTc=-7.828e-03 k2Tc=2.983e-04
+ x0_0=3.232e+00 x0_0_TC=7.829e-04 x0_1=1.000e-06 x0_1_TC=-8.096e-12
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.190e-12*si} ags2={4.590e-13*si} ags3=1.801e+00 ags4=1.971e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={2.270e-15*sr} agd2={5.040e-14*sr} agd3=-2.418e-01 agd4=8.724e+00
+ agd5={6.810e-14*sr} agd6=-6.205e+00 agd7=1.981e+00 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.600e-13*so} asd2={1.723e-13*so} asd3=-1.795e+01 asd4=8.190e+00
+ asd5={4.799e-13*so} asd6=-1.000e+01 asd7=1.488e+00 asd8={1.217e-13*so}
+ asd9=-2.700e+01 asd10=1.701e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2204A gatein drainin sourcein
.param si={aWg*7.500e-04} so={aWg*3.900e-03} sr={aWg}
.param aWg={Wg*1E-3} Wg=837000 A1={4.555e-02*aWg} k2=1.824e+00 k3=9.000e-02 rpara=3.606e-03
+ rpara_s_factor=3.229e-01 aITc=3.000e-03 arTc=-7.500e-03 k2Tc=6.000e-04
+ x0_0=6.137e+00 x0_0_TC=-2.000e-03 x0_1=-2.623e-01 x0_1_TC=0.000e+00
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.023e-09*si} ags2={5.465e-10*si} ags3=1.604e+00 ags4=1.861e-01
+ ags5={1.732e-10*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.942e-15*sr} agd2={1.178e-13*sr} agd3=-5.000e+00 agd4=4.314e+00
+ agd5={7.786e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={1.742e-15*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={8.330e-11*so} asd2={4.297e-11*so} asd3=-1.435e+01 asd4=1.287e+00
+ asd5={1.155e-10*so} asd6=-2.014e+01 asd7=9.467e+00 asd8={4.647e-12*so}
+ asd9=-8.125e+01 asd10=5.665e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2304 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=1730000 A1={1.921e-02*aWg} k2=1.758e+00 k3=9.000e-02 rpara=2.249e-03
+ rpara_s_factor=2.429e-01 aITc=4.683e-03 arTc=-7.360e-03 k2Tc=7.628e-04
+ x0_0=2.687e+00 x0_0_TC=7.404e-04 x0_1=-1.000e-01 x0_1_TC=1.753e-15
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.831e-12*si} ags2={9.072e-13*si} ags3=1.359e+00 ags4=1.584e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.401e-15*sr} agd2={9.833e-14*sr} agd3=-7.500e+00 agd4=2.636e+00
+ agd5={9.444e-15*sr} agd6=-4.667e+01 agd7=1.104e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.438e-13*so} asd2={7.491e-13*so} asd3=-1.135e+01 asd4=8.893e-01
+ asd5={5.128e-13*so} asd6=-2.014e+01 asd7=2.862e+01 asd8={1.076e-13*so}
+ asd9=-4.500e+01 asd10=8.402e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2307 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=870000 A1={3.244e-02*aWg} k2=2.290e+00 k3=9.000e-02 rpara=6.807e-03
+ rpara_s_factor=3.168e-01 aITc=5.543e-03 arTc=-3.493e-03 k2Tc=6.809e-04
+ x0_0=4.384e+00 x0_0_TC=1.414e-03 x0_1=-1.000e-01 x0_1_TC=1.740e-14
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.381e-12*si} ags2={9.963e-13*si} ags3=1.827e+00 ags4=1.724e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.940e-15*sr} agd2={1.180e-13*sr} agd3=-5.000e+00 agd4=4.314e+00
+ agd5={1.000e-14*sr} agd6=-4.000e+01 agd7=1.529e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={2.750e-13*so} asd2={5.725e-13*so} asd3=-1.435e+01 asd4=1.430e+00
+ asd5={5.276e-13*so} asd6=-2.514e+01 asd7=4.207e+01 asd8={1.275e-13*so}
+ asd9=-5.500e+01 asd10=4.780e+00
+ rg_value=0.4
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2252 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=498000 A1={3.552e-02*aWg} k2=1.889e+00 k3=9.000e-02 rpara=7.037e-03
+ rpara_s_factor=2.873e-01 aITc=5.337e-03 arTc=-5.033e-03 k2Tc=8.229e-04
+ x0_0=3.585e+00 x0_0_TC=2.398e-03 x0_1=8.937e-02 x0_1_TC=-1.253e-12
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={7.580e-13*si} ags2={4.460e-13*si} ags3=1.604e+00 ags4=1.809e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.940e-15*sr} agd2={1.180e-13*sr} agd3=-5.000e+00 agd4=4.314e+00
+ agd5={7.790e-15*sr} agd6=-1.726e+01 agd7=1.529e+01 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.250e-13*so} asd2={3.400e-13*so} asd3=-1.285e+01 asd4=2.011e+00
+ asd5={1.987e-13*so} asd6=-2.847e+01 asd7=3.500e+00 asd8={6.330e-14*so}
+ asd9=-6.875e+01 asd10=1.758e+01
+ rg_value=0.7
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2619 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=1092000 A1={2.905e-02*aWg} k2=1.597e+00 k3=9.000e-02 rpara=2.398e-03
+ rpara_s_factor=3.669e-01 aITc=4.997e-03 arTc=-3.532e-03 k2Tc=1.231e-03
+ x0_0=3.185e+00 x0_0_TC=-1.274e-03 x0_1=1.000e-03 x0_1_TC=-1.000e-01
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.060e-12*si} ags2={3.020e-13*si} ags3=1.667e+00 ags4=1.640e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.370e-15*sr} agd2={1.670e-13*sr} agd3=-5.538e-01 agd4=4.884e+00
+ agd5={3.120e-15*sr} agd6=-6.439e+01 agd7=4.289e+00 agd8={0.000e+00*sr}
+ agd9=-2.026e+01 agd10=8.900e-01
+ asd1={2.650e-13*so} asd2={4.316e-13*so} asd3=-1.250e+01 asd4=7.707e+00
+ asd5={9.003e-14*so} asd6=-6.750e+01 asd7=1.108e+01 asd8={1.596e-13*so}
+ asd9=-1.000e+01 asd10=1.206e+00
+ rg_value=0.44
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC7002 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=410000 A1={8.417e-02*aWg} k2=2.250e+00 k3=9.000e-02 rpara=7.452e-03
+ rpara_s_factor=2.327e-01 aITc=4.000e-03 arTc=-7.154e-03 k2Tc=5.772e-04
+ x0_0=6.049e+00 x0_0_TC=-6.176e-03 x0_1=8.152e-01 x0_1_TC=1.453e-02
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={7.556e-13*si} ags2={4.815e-13*si} ags3=1.966e+00 ags4=2.172e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={4.374e-16*sr} agd2={1.511e-13*sr} agd3=-5.690e+00 agd4=4.090e+00
+ agd5={6.399e-15*sr} agd6=-1.839e+01 agd7=1.546e+07 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={1.443e-14*so} asd2={2.981e-13*so} asd3=-1.315e+01 asd4=1.202e+00
+ asd5={9.738e-13*so} asd6=-1.499e+01 asd7=3.639e+01 asd8={0.000e+00*so}
+ asd9=-1.162e+02 asd10=4.426e-02
+ rg_value=1.3
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2361 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=3460000 A1={1.491e-02*aWg} k2=1.878e+00 k3=9.000e-02 rpara=3.670e-04
+ rpara_s_factor=2.759e-01 aITc=3.211e-03 arTc=-8.633e-03 k2Tc=9.140e-04
+ x0_0=2.077e+00 x0_0_TC=-7.848e-03 x0_1=1.000e-03 x0_1_TC=-1.000e-01
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={1.078e-12*si} ags2={3.697e-13*si} ags3=1.610e+00 ags4=1.838e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={3.082e-15*sr} agd2={1.305e-13*sr} agd3=-1.108e+00 agd4=3.663e+00
+ agd5={1.053e-14*sr} agd6=-1.610e+01 agd7=9.651e+00 agd8={0.000e+00*sr}
+ agd9=-2.026e+01 agd10=8.900e-01
+ asd1={2.650e-13*so} asd2={4.721e-13*so} asd3=-8.000e+00 asd4=8.429e+00
+ asd5={9.847e-14*so} asd6=-5.750e+01 asd7=1.211e+01 asd8={1.795e-13*so}
+ asd9=-1.000e+01 asd10=1.357e+00
+ rg_value=0.5
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
************************************************************************
.subckt EPC2057 gatein drainin sourcein
.param si={aWg} so={aWg} sr={aWg}
.param aWg={Wg*1E-3} Wg=448000 A1={3.947e-02*aWg} k2=2.459e+00 k3=9.000e-02 rpara=5.238e-03
+ rpara_s_factor=3.200e-01 aITc=3.769e-03 arTc=-8.580e-03 k2Tc=4.677e-04
+ x0_0=5.113e+00 x0_0_TC=-4.893e-03 x0_1=-2.000e-01 x0_1_TC=3.441e-09
+ dgs1=4.3e-07 dgs2=2.6e-13 dgs3=0.8 dgs4=0.23
+ ags1={7.421e-13*si} ags2={4.093e-13*si} ags3=1.899e+00 ags4=2.429e-01
+ ags5={0.000e+00*si} ags6=7.480e+01 ags7=1.055e+01
+ agd1={1.640e-16*sr} agd2={1.133e-13*sr} agd3=-7.112e+00 agd4=4.606e+00
+ agd5={8.870e-15*sr} agd6=-2.943e+02 agd7=8.697e+06 agd8={0.000e+00*sr}
+ agd9=-3.326e+01 agd10=8.900e-01
+ asd1={3.652e-14*so} asd2={4.444e-13*so} asd3=-1.735e+01 asd4=3.258e+00
+ asd5={6.033e-13*so} asd6=-2.199e+01 asd7=1.255e+02 asd8={0.000e+00*so}
+ asd9=-1.162e+02 asd10=4.426e-02
+ rg_value=0.8
rd drainin drain {((1-rpara_s_factor)*rpara*(1-arTc*(Temp-25)))}
rs sourcein source {(rpara_s_factor*rpara*(1-arTc*(Temp-25)))}
rg gatein gate {(rg_value)}
Rcsdconv drain source {100000Meg/aWg}
Rcgsconv gate source {100000Meg/aWg}
Rcgdconv gate drain {100000Meg/aWg}
bswitch drain source I=if(v(drain,source)>0,
+ (A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,source)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(drain,source)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,source))*v(drain,source))),
+ (-A1*(1-aITc*(Temp-25))*log(1.0+exp((v(gate,drain)-(k2*(1-k2Tc*(Temp-25))))/k3))*
+ v(source,drain)/(1 + (x0_0*(1-x0_0_TC*(Temp-25))+x0_1*(1-x0_1_TC*(Temp-25))*v(gate,drain))*v(source,drain))))
bgsdiode gate source I=if( v(gate,source)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,source))/dgs3)-1)+dgs2*(exp((v(gate,source))/dgs4)-1))))
bgddiode gate drain I=if( v(gate,drain)>10,
+ (0.125*aWg/1077*(dgs1*(exp((10.0)/dgs3)-1)+dgs2*(exp((10.0)/dgs4)-1))),
+ (0.125*aWg/1077*(dgs1*(exp((v(gate,drain))/dgs3)-1)+dgs2*(exp((v(gate,drain))/dgs4)-1))))
C_GS gate source {ags1} TC=0,0
C_CGS1 gate source Q=(0.5*ags2*ags4*log(1+exp((v(gate,source)-ags3)/ags4))+
+ ags5*ags7*log(1+exp((v(source,drain)-ags6)/ags7)))
C_GD gate drain {agd1} TC=0,0
C_CGD1 gate drain Q=(0.5*ags2*ags4*log(1+exp((v(gate,drain)-ags3)/ags4))+
+ agd2*agd4*log(1+exp((v(gate,drain)-agd3)/agd4))+
+ agd5*agd7*log(1+exp((v(gate,drain)-agd6)/agd7))+
+ agd8*agd10*log(1+exp((v(gate,drain)-agd9)/agd10)))
C_SD source drain {asd1} TC=0,0
C_CSD1 source drain Q=(asd2*asd4*log(1+exp((v(source,drain)-asd3)/asd4))+
+ asd5*asd7*log(1+exp((v(source,drain)-asd6)/asd7))+
+ asd8*asd10*log(1+exp((v(source,drain)-asd9)/asd10)))
.ends
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